Patents by Inventor Gerald W. Leech

Gerald W. Leech has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6469794
    Abstract: Apparatus and method for inspecting the interior surfaces of devices such as vessels having a single entry port. Laser energy is introduced into a device under test and to a time delay. Light reflected from the interior surfaces of the device under test is introduced into one end of a dye-cell and the time-delayed light is introduced into the other end. The amount of time delay is adjusted to produce two-photon fluorescence in the dye-cell so that the amount of time delay is representative of the interior surfaces of the device under test.
    Type: Grant
    Filed: June 28, 2001
    Date of Patent: October 22, 2002
    Inventors: Martin S. Piltch, R. Alan Patterson, Gerald W. Leeches, John Van Nierop, John J. Teti, Jr.
  • Patent number: 6229617
    Abstract: Apparatus and method for inspecting the interior surfaces of devices such as vessels having a single entry port. Laser energy is launched into the vessel, and the light reflected from the interior surfaces is interfered with reference laser energy to produce an interference pattern. This interference pattern is analyzed to reveal information about the condition of the interior surfaces of the device inspected.
    Type: Grant
    Filed: February 4, 1999
    Date of Patent: May 8, 2001
    Assignee: The Regents of the University of California
    Inventors: Martin S. Piltch, R. Alan Patterson, Gerald W. Leeches, John Van Nierop, John J. Teti
  • Patent number: 5108967
    Abstract: A .beta.'SiAlON produced from initial reactant materials comprising Al.sub.2 O.sub.3, and carbon that produces a .beta.'SiAlON material having a strength greater than about 50 ksi at approximately 1000.degree. C. In a preferred embodiment of the invention the .beta.'SiAlON material has a strength greater than about 50 ksi at approximately 1200.degree. C. In a second embodiment of the present invention is a low-cost process for producing unsintered high purity alpha silicon nitride structured SiAlON by carbothermic reaction from initial reactant materials comprising Al.sub.2 O.sub.3, SiO.sub.2 and carbon.
    Type: Grant
    Filed: December 10, 1990
    Date of Patent: April 28, 1992
    Assignee: Aluminum Company of America
    Inventors: Frankie E. Phelps, Gerald W. Leech, Robert W. Woods
  • Patent number: 4977113
    Abstract: A process for producing an unsintered SiAlON material by carbothermic reaction without the use of contaminating transition metal oxides to increase the rate of reaction. The process includes providing small quantities of SiAlON crystals which seed the reaction. The phase of the SiAlON seed crystals will determine the phase of the SiAlON produced.
    Type: Grant
    Filed: May 15, 1989
    Date of Patent: December 11, 1990
    Assignee: Aluminum Company of America
    Inventors: Frankie E. Phelps, Gerald W. Leech