Abstract: The invention concerns a silicon designed in particular for making solar cells containing a total of impurities ranging between 100 and 400 ppm, a boron content ranging between 0.5 and 3 ppm, a phosphorus/boron content ratio ranging between 1 and 3, and a content of metal elements ranging between 30 and 300 ppm. The invention also concerns a method for making such a silicon from an oxygen- or chorine-refined metallurgical silicon containing at least 500 ppm of metal elements, and comprising: refusion under neutral atmosphere of the refined silicon, in an electric furnace equipped with a hot crucible; transferring the molten silicon, to provide a plasma refining, in an electric furnace equipped with a hot crucible; plasma refining with as plasma-forming gas a mixture of argon and of at least a gas belonging the group consisting of chlorine, fluorine, HCI and HF; casting under controlled atmosphere in an ingot mold wherein is produced segregated solidification.

Abstract: The invention concerns a method for producing a medium purity silicon comprising: preparing, by carbothermic reduction of silica in a submerged arc-furnace a silicon with low boron content; refining the liquid silicon with oxygen or chlorine; treating the refined silicon under reduced pressure from 10 to 100 Pa with neutral gas injection; segregated solidification. The invention also concerns a medium purity silicon designed to serve as raw material for making silicon of electronic or voltaic quality, and having (in weight fractions): a total of impurities ranging between 100 and 400 ppm, with the content in metallic elements ranging between 30 and 300 ppm; a boron content from 1 to 10 ppm; a phosphorus/boron ratio ranging between 0.5 and 1.5.

Abstract: The present invention relates to a silicon refining installation, having a cold sectorized induction crucible, having its internal wall lined with a refractory material.

Abstract: The invention concerns a method for producing a medium purity silicon comprising: preparing, by carbothermic reduction of silica in a submerged arc-furnace a silicon with low boron content; refining the liquid silicon with oxygen or chlorine; treating the refined silicon under reduced pressure from 10 to 100 Pa with neutral gas injection; segregated solidification. The invention also concerns a medium purity silicon designed to serve as raw material for making silicon of electronic or voltaic quality, and having (in weight fractions): a total of impurities ranging between 100 and 400 ppm, with the content in metallic elements ranging between 30 and 300 ppm; a boron content from 1 to 10 ppm; a phosphorus/boron ratio ranging between 0.5 and 1.5.

Abstract: The invention concerns a silicon designed in particular for making solar cells containing a total of impurities ranging between 100 and 400 ppm, a boron content ranging between 0.5 and 3 ppm, a phosphorus/boron content ratio ranging between 1 and 3, and a content of metal elements ranging between 30 and 300 ppm. The invention also concerns a method for making such a silicon from an oxygen- or chorine-refined metallurgical silicon containing at least 500 ppm of metal elements, and comprising: refusion under neutral atmosphere of the refined silicon, in an electric furnace equipped with a hot crucible; transferring the molten silicon, to provide a plasma refining, in an electric furnace equipped with a hot crucible; plasma refining with as plasma-forming gas a mixture of argon and of at least a gas belonging the group consisting of chlorine, fluorine, HCI and HF; casting under controlled atmosphere in an ingot mould wherein is produced segregated solidification.

Abstract: Catalyst support in granular form with a SiC&bgr; crystallite base and a high specific surface area having improved mechanical characteristics. The porosity of the support is between 0.001 and 1 um in size and the crystallinity of the support is determined by: a full width at half maximum of diffraction X rays, corresponding to plane [2 2 0] of the SiC&bgr; crystallites, of between 0.15 and 0.60°, angle 2&thgr; of Bragg's law; and a bidimensional peak height [1 0] corresponding to directions [1 0] normalized by the integrated intensity of the peak of plane [2 2 0] of between 0.15 and 0.40.

Abstract: The invention concerns a process for preparing a silicon carbide foam consisting of attacking a polyurethane foam with an alkaline solution, impregnating it, after rinsing and drying, with a suspension of silicon powder in an organic resin, heating progressively to polymerise the resin, carbonising the polyurethane foam and resin, and finally carburising the silicon contained in the resin suspension by means of the carbon originating from the carbonisation of the foam and resin.The foams obtained are characterised by a high microporosity and a mesoporosity which is variable according to the carburising temperature.The invention finds an application in the manufacture of catalyst carriers for exhaust chambers and filters for diesel engines.