Abstract: The invention relates to small dimension image recorders, such as an image recorder, comprising a matrix of rows and columns of photosensitive points, arranged on a chip of a generally square or rectangular form with believed corners, characterised in comprising a reading register arranged at the base of the matrix. The register is bent to follow the bevelled corners of the chip and thus comprises a horizontal piece and two oblique pieces. The sensor further comprises means (ZIn) to direct the photosensitive charges form the columns terminating opposite the beveled corners towards the stage of the reister situated in the oblique part along the beveled corners. The above is of application to intraoral dental radiological sensors.

Abstract: The invention relates to small dimension image recorders, such as an image recorder, comprising a matrix of rows and columns of photosensitive points, arranged on a chip of a generally square or rectangular form with believed corners, characterised in comprising a reading register arranged at the base of the matrix. The register is bent to follow the bevelled corners of the chip and thus comprises a horizontal piece and two oblique pieces. The sensor further comprises means (ZIn) to direct the photosensitive charges form the columns terminating opposite the beveled corners towards the stage of the reister situated in the oblique part along the beveled corners. The above is of application to intraoral dental radiological sensors.

Abstract: The invention provides a method of forming electrodes aligned with respect to an implantation level in a substrate, including the following main phases:formation of a dielectric layer on a substrate;formation of semiconducting or conducting elements which are to serve as mask for implantation;implantation;formation of a layer of conducting or semiconducting material;cutting out electrodes from said layer and from the semiconducting or conducting elements.

Abstract: In this transverse charge transfer filter having N MOS capacitors arranged on the same semiconductor substrate and provided with electrodes, the electrode of every other MOS capacitor has its ends covered by the ends of the electrodes of two adjacent MOS capacitors, the N MOS capacitors being arranged in n rows and the charge transfer direction in two adjacent rows being opposite, which makes it possible to compensate for the effects of the displacements of the masks used for manufacturing the transverse charge transfer filters.