Patents by Inventor Gerard Jean Louis Bouisse
Gerard Jean Louis Bouisse has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9509252Abstract: The invention relates to a Doherty amplifier for amplifying an input signal at an operating frequency, comprising: a main amplifier; a first peak amplifier; a second peak amplifier, each of the amplifiers comprising an input for receiving the input signal and an output for providing an amplified signal, a plurality of peak amplifiers, each of the amplifiers comprising an input for receiving the input signal and an output for providing an amplified signal; a first input phase shifter; a second input phase shifter; a first capacitor coupled between the source and drain of the first peak amplifier; a first output phase shifter and a second output phase shifter.Type: GrantFiled: October 28, 2014Date of Patent: November 29, 2016Assignee: Ampleon Netherlands B.V.Inventors: Xavier Moronval, Gerard Jean-Louis Bouisse, Jean-Jacques Bouny
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Patent number: 9331664Abstract: A Marchand balun has a primary transmission line with a width smaller than the two secondary transmission lines. The two secondary transmission lines also have different widths and lengths. This arrangement provides an imbalance between the widths and lengths of the transmission lines. It has been found that this imbalance can enable improved amplitude unbalance and phase unbalance.Type: GrantFiled: June 10, 2014Date of Patent: May 3, 2016Assignee: SAMBA HOLDCO NETHERLANDS B.V.Inventors: Gerard Jean-Louis Bouisse, Rajeev Busgeeth
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Patent number: 9270233Abstract: Radio Frequency (RF) amplifier circuits are disclosed which may exhibit improved video/instantaneous bandwidth performance compared to conventional circuits. For example, disclosed RF amplifier circuits employ various concepts for reducing an overall circuit inductance or enabling an increase in capacitance for a given circuit size.Type: GrantFiled: October 15, 2013Date of Patent: February 23, 2016Assignee: Samba Holdco Netherlands B.V.Inventors: Gerard Jean-Louis Bouisse, Xavier Moronval
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Patent number: 9257946Abstract: Radio Frequency (RF) amplifier circuits are disclosed which may exhibit improved video/instantaneous bandwidth performance compared to conventional circuits. For example, disclosed RF amplifier circuits may employ a baseband decoupling network connected in parallel with a low-pass RF matching network of the amplifier circuit.Type: GrantFiled: October 15, 2013Date of Patent: February 9, 2016Inventors: Gerard Jean-Louis Bouisse, Jean-Jacques Bouny
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Patent number: 9070565Abstract: A power transistor circuit uses first and second power transistors in differential mode. An inductor arrangement of inductors is formed by wire bonds between the drains. The transistors are in a mirrored configuration, and the inductor arrangement comprises wire bonds which extend between the drain connections across the space between the mirrored transistors.Type: GrantFiled: October 15, 2013Date of Patent: June 30, 2015Assignee: NXP, B.V.Inventor: Gerard Jean-Louis Bouisse
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Publication number: 20150145601Abstract: The invention relates to a Doherty amplifier for amplifying an input signal at an operating frequency, comprising: a main amplifier; a first peak amplifier; a second peak amplifier, each of the amplifiers comprising an input for receiving the input signal and an output for providing an amplified signal, a plurality of peak amplifiers, each of the amplifiers comprising an input for receiving the input signal and an output for providing an amplified signal; a first input phase shifter; a second input phase shifter; a first capacitor coupled between the source and drain of the first peak amplifier; a first output phase shifter and a second output phase shifter.Type: ApplicationFiled: October 28, 2014Publication date: May 28, 2015Inventors: Xavier Moronval, Gerard Jean-Louis Bouisse, Jean-Jacques Bouny
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Patent number: 9041465Abstract: Differential amplifier circuits for LDMOS-based amplifiers are disclosed. The differential amplifier circuits comprise a high resistivity substrate and separate DC and AC ground connections. Such amplifier circuits may not require thru-substrate vias for ground connection.Type: GrantFiled: July 28, 2014Date of Patent: May 26, 2015Assignee: NXP, B.V.Inventor: Gerard Jean-Louis Bouisse
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Publication number: 20150048884Abstract: Differential amplifier circuits for LDMOS-based amplifiers are disclosed. The differential amplifier circuits comprise a high resistivity substrate and separate DC and AC ground connections. Such amplifier circuits may not require thru-substrate vias for ground connection.Type: ApplicationFiled: July 28, 2014Publication date: February 19, 2015Inventor: Gerard Jean-Louis Bouisse
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Publication number: 20140368270Abstract: A Marchand balun has a primary transmission line with a width smaller than the two secondary transmission lines. The two secondary transmission lines also have different widths and lengths. This arrangement provides an imbalance between the widths and lengths of the transmission lines. It has been found that this imbalance can enable improved amplitude unbalance and phase unbalance.Type: ApplicationFiled: June 10, 2014Publication date: December 18, 2014Applicant: NXP B.V.Inventors: Gerard Jean-Louis Bouisse, Rajeev Busgeeth
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Publication number: 20140179243Abstract: Radio Frequency (RF) amplifier circuits are disclosed which may exhibit improved video/instantaneous bandwidth performance compared to conventional circuits. For example, disclosed RF amplifier circuits employ various concepts for reducing an overall circuit inductance or enabling an increase in capacitance for a given circuit size.Type: ApplicationFiled: October 15, 2013Publication date: June 26, 2014Applicant: NXP B.V.Inventors: Gerard Jean-Louis Bouisse, Xavier Moronval
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Publication number: 20140104004Abstract: Radio Frequency (RF) amplifier circuits are disclosed which may exhibit improved video/instantaneous bandwidth performance compared to conventional circuits. For example, disclosed RF amplifier circuits may employ a baseband decoupling network connected in parallel with a low-pass RF matching network of the amplifier circuit.Type: ApplicationFiled: October 15, 2013Publication date: April 17, 2014Applicant: NXP B.V.Inventors: Gerard Jean-Louis Bouisse, Jean-Jacques Bouny
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Publication number: 20140103447Abstract: A power transistor circuit uses first and second power transistors in differential mode. An inductor arrangement of inductors is formed by wire bonds between the drains. The transistors are in a mirrored configuration, and the inductor arrangement comprises wire bonds which extend between the drain connections across the space between the mirrored transistors.Type: ApplicationFiled: October 15, 2013Publication date: April 17, 2014Applicant: NXP B.V.Inventor: Gerard Jean-Louis Bouisse
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Publication number: 20020145483Abstract: An impedance matching circuit (10) matches the impedance of a load (19) coupled to an RF amplifier (12) to that of the RF amplifier (12). The impedance matching circuit (10) samples a transmitted signal from the RF amplifier (12) and a reflected signal from the load (19). The amplitude and the phase of the sampled reflected signal are compared with those of the sampled transmitted signal to calculate the impedance mismatch. A control logic circuit (80) adjusts the capacitance and inductance values of variable capacitance (23, 27) and inductance (35) elements in the impedance matching circuit (10), thereby matching the impedance of the load (19) to that of the RF amplifier (12).Type: ApplicationFiled: April 5, 2002Publication date: October 10, 2002Inventor: Gerard Jean Louis Bouisse
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Patent number: 6414562Abstract: An impedance matching circuit (10) matches the impedance of a load (19) coupled to an RF amplifier (12) to that of the RF amplifier (12). The impedance matching circuit (10) samples a transmitted signal from the RF amplifier (12) and a reflected signal from the load (19). The amplitude and the phase of the sampled reflected signal are compared with those of the sampled transmitted signal to calculate the impedance mismatch. A control logic circuit (80) adjusts the capacitance and inductance values of variable capacitance (23; 27) and inductance (35) elements in the impedance matching circuit (10), thereby matching the impedance of the load (19) to that of the RF amplifier (12).Type: GrantFiled: May 27, 1997Date of Patent: July 2, 2002Assignee: Motorola, Inc.Inventors: Gerard Jean Louis Bouisse, John E. Morgan