Patents by Inventor Gerard Joseph Lim

Gerard Joseph Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MAGNETIC LOGIC DEVICE, CIRCUIT HAVING MAGNETIC LOGIC DEVICES, AND METHODS FOR CONTROLLING THE MAGNETIC LOGIC DEVICE AND THE CIRCUIT
    Publication number: 20220385292
    Abstract: A magnetic logic device having two magnetic elements and a conductive element coupled to the two magnetic elements and arranged at least substantially perpendicular to the magnetic elements, wherein the device is configured, for each magnetic element, to have a magnetisation state with a perpendicular easy axis, and to switch the magnetisation state in response to a spin current generated in the magnetic element in response to a write current applied to the magnetic element, and configured to generate, as an output, a Hall voltage across the conductive element in response to a respective read current applied to each magnetic element, wherein a magnitude of the Hall voltage is variable, depending on a direction of the magnetisation state of each magnetic element and a direction of the respective read current applied to each magnetic element, for the device to provide outputs corresponding to one of a plurality of logical operations.
    Type: Application
    Filed: November 2, 2020
    Publication date: December 1, 2022
    Applicant: Nanyang Technological University
    Inventors: Chu Keong Gerard Joseph LIM, Chandrasekhar MURAPAKA, Wen Siang LEW
  • Integrated circuits with magnetic tunnel junctions and methods of producing the same
    Patent number: 10475495
    Abstract: Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction stack. The magnetic tunnel junction stack includes a first free layer that is magnetic, a second free layer that is magnetic, and an insertion layer positioned between the first and second free layers. The insertion layer is non-magnetic, and the insertion layer includes terbium.
    Type: Grant
    Filed: February 14, 2018
    Date of Patent: November 12, 2019
    Assignee: GLOBALFOUNDRIES SINGAPORE PTE. LTD.
    Inventors: Wai Cheung Law, Taiebeh Tahmasebi, Chim Seng Seet, Kai Hung Alex See, Gerard Joseph Lim, Wen Siang Lew
  • INTEGRATED CIRCUITS WITH MAGNETIC TUNNEL JUNCTIONS AND METHODS OF PRODUCING THE SAME
    Publication number: 20190252600
    Abstract: Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction stack. The magnetic tunnel junction stack includes a first free layer that is magnetic, a second free layer that is magnetic, and an insertion layer positioned between the first and second free layers. The insertion layer is non-magnetic, and the insertion layer includes terbium.
    Type: Application
    Filed: February 14, 2018
    Publication date: August 15, 2019
    Inventors: Wai Cheung Law, Taiebeh Tahmasebi, Chim Seng Seet, Kai Hung Alex See, Gerard Joseph Lim, Wen Siang Lew