Abstract: Routing layers, e.g., back-end of line (BEOL) routing layers, of a semiconductor device are disclosed. Unlike conventional routing layers, the proposed routing layers include mixed pitch track patterns. As such, routing layers with reduced resistance-capacitance (RC) and low routing cost may be achieved.

Abstract: Routing layers, e.g., back-end of line (BEOL) routing layers, of a semiconductor device are disclosed. Unlike conventional routing layers, the proposed routing layers include mixed pitch track patterns. As such, routing layers with reduced resistance-capacitance (RC) and low routing cost may be achieved.

Abstract: In a first aspect, a semiconductor device includes a plurality of cells. Each cell of the plurality of cells includes four metal tracks running substantially parallel to each other in a first metal layer to provide signal routing and a plurality of wrapped channels having a pitch that is uniform among the plurality of wrapped channels. In a second aspect, a semiconductor device includes a plurality of cells. Each cell of the plurality of cells includes four metal tracks running substantially parallel to each other in a first metal layer to provide signal routing and a plurality of wrapped channels having an asymmetric distribution. For example, a first distance between a first pair of adjacent wrapped channels is different than a second distance between a second pair of adjacent wrapped channels.