Abstract: A method for manufacturing electrodes on a semiconducting material of type II-VI or on a compound of this material. The electrodes are preferably in gold or platinum and are formed by electrochemical deposition of gold or platinum from a solution of gold or platinum chloride in pure hydrochloric acid.

Abstract: A method for manufacturing electrodes on a semiconducting material of type II-VI or on a compound of this material. The electrodes are preferably in gold or platinum and are formed by electrochemical deposition of gold or platinum from a solution of gold or platinum chloride in pure hydrochloric acid.

Abstract: The device according to the present invention comprises a furnace (10) provided with heating means allowing said material to be crystallised to be rendered liquid, then to be cooled until it progressively solidifies. The device also comprises reception means (20) of the material (21) disposed in the furnace, fixed relative to the furnace and situated such that the material is in the intermediary zone. The heating means (11, 12, 13) supply three heating zones: a hot zone (16), an intermediary zone (15) and a cold zone (14). Thermally conductive means (17) are disposed between the reception means (20) and the heating means (11, 12, 13) and extend from the cold zone as far as the hot zone.

Abstract: A photoelectric detection device detecting X or gamma radiation having a monolithic matrix detector made of a semiconductor material. One side of the detector includes a plurality of detecting electrodes, each electrode corresponding to one pixel. Each electrode is electrically connected to a reading circuit, and is separated from the adjacent electrodes by an insulating interpixel region. The detecting electrodes and the interpixel region are located at two different levels of the detector face. The detecting electrodes are positioned within deeply etched regions in the surface of the semiconductor material, which are surrounded by the interpixel regions.

Abstract: The invention concerns a photoelectric detection device, more particularly for detecting X or gamma radiation, comprising a monolithic matrix detector (1), made of a semiconductor material (2), whereof one side includes a plurality of detecting electrodes (6), based on a pixellization principle, each electrode (6) corresponding to one pixel, being designed to be electrically connected, in particular to a reading circuit, and being separated from the adjacent electrodes by an insulating intermediate zone (7), called interpixel zone. The detecting electrodes (6) and the interpixel zone (7) are located at two different levels, at the detector. The detecting electrodes (6) are positioned on the surface (3) of the semiconductor material (2) after deep etching (15) has been provided at the implantation zones of said electrodes.

Abstract: The device according to the present invention comprises a furnace (10) provided with heating means allowing said material to be crystallised to be rendered liquid, then to be cooled until it progressively solidifies. The device also comprises reception means (20) of the material (21) disposed in the furnace, fixed relative to the furnace and situated such that the material is in the intermediary zone. The heating means (11, 12, 13) supply three heating zones: a hot zone (16), an intermediary zone (15) and a cold zone (14). Thermally conductive means (17) are disposed between the reception means (20) and the heating means (11, 12, 13) and extend from the cold zone as far as the hot zone.

Abstract: The invention concerns a crystallization furnace for a material with low thermal conductivity arid/or low hardness.This furnace can obtain high quality single crystals.This furnace comprises a heating chamber (1), heating means (13) to create a temperature profile along the center line of said chamber and thus define at least one heating zone (3), and at least one cooling zone (5) and a crucible (9) filled with a solution of a solute to be crystallized in a solvent, said crucible (9) being fixed and placed in the heating chamber (1) in the heating zone (3), characterized in that the furnace also comprises:a crystallization device (27) comprising a temperature homogenizer (29A) and a heat sink (29B) separated by a thermally insulating spacer (31), said temperature homogenizer, heat sink and insulating spacer being rigidly attached to each other, andmeans (37) of displacing said crystallization device (27) along the center line of the chamber and around said crucible (9).

Abstract: Hybrid circuit formed of two circuits (1, 2) combined by spherical balls (10) with electric connection.The conductive tracks (6) the balls (10) connect do not adhere to the circuits (1, 2) at portions (11) situated around the balls (10). As a result, these portions (11) may be safely removed and the balls (10) are able to roll onto the circuits (1, 2) if the latter are subjected to a relative movement due, for example, to differential thermic cubical expansions. Thus, the balls (10) are not stressed.

Abstract: A process and device for marking and cleaving plaquettes of monocrystalline semiconducting materials is described. According to invention, in order to mark off a reference direction onto a plaquette of a monocrystalline semiconducting material having a low hardness, an impression (1) is formed on the useful face of the plaquette and in a non useful area of that face, the impression bringing into view at least one direction from which the reference direction (9, 11, 13) is deduced, and the latter is marked off by means of a line on the non useful area. Since the reference direction corresponds to a cleavage plane of the plaquette, the latter, in addition, is cleaved by tracing a cleavage line along the reference direction on the other face of the plaquette.