Abstract: A back contact substrate for a photovoltaic cell includes a carrier substrate and an electrode, the electrode including an alloy thin film based on at least two elements, at least one first element MA chosen among copper (Cu), silver (Ag) and gold (Au), and at least one second element MB chosen among zinc (Zn), titanium (Ti), tin (Sn), silicon (Si), germanium (Ge), zirconium (Zr), hafnium (Hf), carbon (C) and lead (Pb).

Abstract: A back contact substrate for a photovoltaic cell includes a carrier substrate and an electrode, the electrode including an alloy thin film based: on at least one among copper (Cu) and silver (Ag); and on zinc (Zn).

Abstract: A back contact substrate for a photovoltaic cell, including a carrier substrate and an electrode, the electrode including a conductive coating including a metallic thin film based on a metal or metal alloy; a barrier to selenization thin film for protecting the conductive coating and based on at least one among MoxOyNz, WxOyNz, TaxOyNz, NbxOyNz, RexOyNz.

Abstract: A subject-matter of the invention is a conducting substrate (1) for a photovoltaic cell, comprising a carrier substrate (2) and an electrode coating (6) formed on the carrier substrate (2). The electrode coating (6) comprises a main molybdenum-based layer (8) formed on the carrier substrate (2), a barrier layer to selenization (10) formed on the main molybdenum-based layer (8) and, on the barrier layer to selenization (10), an upper layer (12) based on a metal M capable of forming, after sulfurization and/or selenization, an ohmic contact layer with a photoactive semiconducting material. The barrier layer to selenization (10) has a thickness of less than or equal to 50 nm, preferably of less than or equal to 30 nm, more preferably of less than or equal to 20 nm.

Abstract: A conducting substrate includes a dielectric substrate having alkali ions, an electrode coating having a molybdenum-based layer on the substrate, and a stack of several layers between the substrate and the electrode coating. The stack comprises a first layer impermeable to alkali on the substrate, a layer for retention of alkali on the first layer impermeable to alkali and made of another material, and a second layer impermeable to alkali on the layer for retention of alkali and made of a material other than the layer for retention of alkali. The ratio of the thickness of the layer for retention of alkali to the first layer impermeable to alkali is equal to 2 or more.

Abstract: A method for producing a coated glass substrate is described. The method includes depositing a TCO (thin conductive oxide) layer with a layer thickness of 100 nm to 1000 nm on a glass substrate, depositing an inert top coating, comprising Al2O3, SiO2, Si3N4, and/or mixtures thereof, with an average layer thickness of 0.5 nm to 5 nm on the TCO layer, and heating the glass substrate at 550° C. to 800° C. and then etching in an acid, with the inert top coating not removed before the etching.

Abstract: Method of fabricating a transparent electrode based on zinc oxide, characterized in that a layer based on zinc oxide is deposited on at least one of the faces of a substrate or on at least one layer in contact with one of the faces of said substrate, and in that this layer is subjected to a heat treatment so as to over-oxidize a portion of the surface of said layer to a fraction of its thickness.