Abstract: A polishing apparatus is provided for removing material from a surface of a substrate. The apparatus includes a polishing head for positioning a surface of a substrate against a polishing surface of the apparatus. The polishing head includes a subcarrier adapted to hold the substrate during a polishing operation, and a retaining ring having an inner edge disposed about the subcarrier and a lower surface in contact with the polishing surface during the polishing operation, the lower surface of the retaining ring having a number of radial recesses formed therein to distribute a chemical between the substrate held on the subcarrier and the polishing surface when there is relative motion between the substrate and the polishing surface, thereby inhibiting non-planar polishing of the surface of the substrate.

Abstract: In one aspect, the invention provides a method for planarizing a circular disc-type semiconductor wafer or other substrate. The method includes the steps of pressing a retaining ring surrounding the wafer against a polishing pad at a first pressure; pressing a first peripheral edge portion of the wafer against the polishing pad with a second pressure; and pressing a second portion of the wafer interior to the peripheral edge portion against the polishing pad with a third pressure. The second pressure may be provided through a mechanical member in contact with the peripheral edge portion; and the second pressure may be a pneumatic pressure against a backside surface of the wafer. Desirably, the pneumatic pressure is exerted through a resilient membrane, or is exerted by gas pressing directly against at least a portion of the wafer backside surface.

Abstract: A system (100) and method for polishing and planarizing a substrate (105) is provided that reduces non-uniformities in the removal of material from the edge of the substrate due to a rebound effect. In one embodiment system (100) includes a polishing head (140) having a carrier (155), a subcarrier (160) carried by the carrier and adapted to hold the substrate during a polishing operation, and a retaining ring (170) having an inner edge (220) disposed about the subcarrier. A lower surface (210) of the retaining ring (170) is in contact with a polishing surface (125) during the polishing operation, and has at least one annular recess (215) formed therein to enable the polishing surface compressed under the retaining ring to rebound into the annular recess, thereby reducing the rebound effect and inhibiting non-planar polishing of the surface of the substrate (105).

Abstract: In one aspect, the invention provides a method for planarizing a circular disc-type semiconductor wafer or other substrate. The method includes the steps of pressing a retaining ring surrounding the wafer against a polishing pad at a first pressure; pressing a first peripheral edge portion of the wafer against the polishing pad with a second pressure; and pressing a second portion of the wafer interior to the peripheral edge portion against the polishing pad with a third pressure. The second pressure may be provided through a mechanical member in contact with the peripheral edge portion; and the second pressure may be a pneumatic pressure against a backside surface of the wafer. Desirably, the pneumatic pressure is exerted through a resilient membrane, or is exerted by gas pressing directly against at least a portion of the wafer backside surface.

Abstract: An apparatus (100) and method are provided for polishing a substrate (105) that achieves a high-planarization uniformity. In one embodiment, the apparatus (100) includes a subcarrier (165) with a lower surface (170), a flexible member (245) extending across the lower surface, and a control-insert (280) disposed between the flexible member and the lower surface. The flexible member (245) has a surface adapted to press the substrate against a polishing pad. The control-insert (280) inhibits non-planar polishing by providing a variable removal rate across the substrate surface. The control-insert (245) can be an annular ring (280A) located near an outer edge of the flexible member (245) to control the removal rate near an edge of the substrate (105), or a disk (280B) near a center (290) of the flexible member to control the removal rate near a center of the substrate. The removal rate can be further controlled by varying a cross-sectional thickness of the control-insert (245).

Abstract: An apparatus and method for planarizing a substrate are provided. The apparatus (101) includes a subcarrier (354) having an outer surface (378) with an annular first membrane (376) coupled thereto. The first membrane (376) has a receiving surface (380) adapted to receive the substrate (356) thereon, and a lip (382) adapted to seal with a backside of the substrate to define a first chamber (384) therebetween. A second membrane (386) positioned above the first membrane (376), and coupled to the subcarrier (354) defines a second chamber (388). During a polishing operation pressurized fluid introduced into the second chamber (388) causes it to expand outward to exert a force on a portion of the backside of the substrate (356), thereby pressing a predetermined area (392) of the surface of the substrate against the polishing pad. The predetermined area (392) is directly proportional to the pressure of the fluid introduced into the second chamber (388).

Abstract: A polishing apparatus is provided for removing material from a surface of a substrate. The apparatus includes a polishing head for positioning a surface of a substrate against a polishing surface of the apparatus. The polishing head includes a subcarrier adapted to hold the substrate during a polishing operation, and a retaining ring having an inner edge disposed about the subcarrier and a lower surface in contact with the polishing surface during the polishing operation, the lower surface of the retaining ring having a number of radial recesses formed therein to distribute a chemical between the substrate held on the subcarrier and the polishing surface when there is relative motion between the substrate and the polishing surface, thereby inhibiting non-planar polishing of the surface of the substrate.

Abstract: In one aspect, the invention provides a method for planarizing a circular disc-type semiconductor wafer or other substrate. The method includes the steps of pressing a retaining ring surrounding the wafer against a polishing pad at a first pressure; pressing a first peripheral edge portion of the wafer against the polishing pad with a second pressure; and pressing a second portion of the wafer interior to the peripheral edge portion against the polishing pad with a third pressure. The second pressure may be provided through a mechanical member in contact with the peripheral edge portion; and the second pressure may be a pneumatic pressure against a backside surface of the wafer. Desirably, the pneumatic pressure is exerted through a resilient membrane, or is exerted by gas pressing directly against at least a portion of the wafer backside surface.

Abstract: A polishing apparatus (100) and method for polishing and planarizing a substrate (105) is provided that achieves a high-planarization uniformity across the substrate, while providing a more efficient use of slurry. In one embodiment, the apparatus (100) includes a subcarrier (160) with a flexible member (185) attached to a lower surface (165) of it on which the substrate is held. The flexible member (185) has at least one hole (195) therein so that a pressurized fluid introduced between the flexible member and the subcarrier (160) directly presses the substrate (105) against a polishing surface (125) during operation. The number and size of the holes (195) are selected to provide sufficient friction between the flexible member (185) and the substrate (105) to cause it to rotate when a drive mechanism rotates the subcarrier (160).

Abstract: In one aspect, the invention provides a method for planarizing a circular disc-type semiconductor wafer or other substrate. The method includes the steps of pressing a retaining ring surrounding the wafer against a polishing pad at a first pressure; pressing a first peripheral edge portion of the wafer against the polishing pad with a second pressure; and pressing a second portion of the wafer interior to the peripheral edge portion against the polishing pad with a third pressure. The second pressure may be provided through a mechanical member in contact with the peripheral edge portion; and the second pressure may be a pneumatic pressure against a backside surface of the wafer. Desirably, the pneumatic pressure is exerted through a resilient membrane, or is exerted by gas pressing directly against at least a portion of the wafer backside surface.

Abstract: A system (100) and method for polishing and planarizing a substrate (105) is provided that reduces non-uniformities in the removal of material from the edge of the substrate due to a rebound effect. In one embodiment system (100) includes a polishing head (140) having a carrier (155), a subcarrier (160) carried by the carrier and adapted to hold the substrate during a polishing operation, and a retaining ring (170) having an inner edge (220) disposed about the subcarrier. A lower surface (210) of the retaining ring (170) is in contact with a polishing surface (125) during the polishing operation, and has at least one annular recess (215) formed therein to enable the polishing surface compressed under the retaining ring to rebound into the annular recess, thereby reducing the rebound effect and inhibiting non-planar polishing of the surface of the substrate (105).

Abstract: The invention provides structure and method for achieving a uniformly polished or planarized substrate such as a semiconductor wafer including achieving substantially uniform polishing between the center of the semiconductor wafer and the edge of the wafer. In one aspect the invention provides a polishing apparatus including a housing, a carrier for mounting a substrate to be polished, a retaining ring circumscribing the carrier for retaining the substrate, a first coupling attaching the retaining ring to the carrier such that the retaining ring may move relative to the carrier, a second coupling attaching the carrier to the housing such that the carrier may move relative to the housing, the housing and the first coupling defining a first pressure chamber to exert a pressure force against the retaining ring, and the housing and the second coupling defining a second pressure chamber to exert a pressure force against the subcarrier. In one embodiment, the couplings are diaphragms.

Abstract: An apparatus (100) and method are provided for polishing a substrate (105) that achieves a high-planarization uniformity. In one embodiment, the apparatus (100) includes a subcarrier (165) with a lower surface (170), a flexible member (245) extending across the lower surface, and a control-insert (280) disposed between the flexible member and the lower surface. The flexible member (245) has a surface adapted to press the substrate against a polishing pad. The control-insert (280) inhibits non-planar polishing by providing a variable removal rate across the substrate surface. The control-insert (245) can be an annular ring (280A) located near an outer edge of the flexible member (245) to control the removal rate near an edge of the substrate (105), or a disk (280B) near a center (290) of the flexible member to control the removal rate near a center of the substrate. The removal rate can be further controlled by varying a cross-sectional thickness of the control-insert (245).

Abstract: An apparatus and method for planarizing a substrate are provided. The apparatus (101) includes a subcarrier (354) having an outer surface (378) with an annular first membrane (376) coupled thereto. The first membrane (376) has a receiving surface (380) adapted to receive the substrate (356) thereon, and a lip (382) adapted to seal with a backside of the substrate to define a first chamber (384) therebetween. A second membrane (386) positioned above the first membrane (376), and coupled to the subcarrier (354) defines a second chamber (388). During a polishing operation pressurized fluid introduced into the second chamber (388) causes it to expand outward to exert a force on a portion of the backside of the substrate (356), thereby pressing a predetermined area (392) of the surface of the substrate against the polishing pad. The predetermined area (392) is directly proportional to the pressure of the fluid introduced into the second chamber (388).

Abstract: The invention provides structure and method for achieving a uniformly polished or planarized substrate such as a semiconductor wafer including achieving substantially uniform polishing between the center of the semiconductor wafer and the edge of the wafer. In one aspect the invention provides a polishing apparatus including a housing, a carrier for mounting a substrate to be polished, a retaining ring circumscribing the carrier for retaining the substrate, a first coupling attaching the retaining ring to the carrier such that the retaining ring may move relative to the carrier, a second coupling attaching the carrier to the housing such that the carrier may move relative to the housing, the housing and the first coupling defining a first pressure chamber to exert a pressure force against the retaining ring, and the housing and the second coupling defining a second pressure chamber to exert a pressure force against the subcarrier. In one embodiment, the couplings are diaphragms.

Abstract: The invention provides structure and method for achieving a uniformly polished or planarized substrate such as a semiconductor wafer including achieving substantially uniform polishing between the center of the semiconductor wafer and the edge of the wafer. In one aspect the invention provides a polishing apparatus including a housing, a carrier for mounting a substrate to be polished, a retaining ring circumscribing the carrier for retaining the substrate, a first coupling attaching the retaining ring to the carrier such that the retaining ring may move relative to the carrier, a second coupling attaching the carrier to the housing such that the carrier may move relative to the housing, the housing and the first coupling defining a first pressure chamber to exert a pressure force against the retaining ring, and the housing and the second coupling defining a second pressure chamber to exert a pressure force against the subcarrier. In one embodiment, the couplings are diaphragms.