Patents by Inventor Gerardus L. Dinghs

Gerardus L. Dinghs has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making a semiconductor laser with end zones for reducing non-radiating recombination
    Patent number: 4670966
    Abstract: A semiconductor laser having mirror faces serving as resonators, in which the active laser region (2) includes end zones adjoining the mirror faces which have implanted ions, preferably protons, with associated crystal damage. The end zones have a length which is at least equal to the diffusion length of the recombining charge carriers in the end zones. As a result of the high recombination rate in the end zones substantially no non-radiating recombination occurs at the mirror faces so that mirror erosion is avoided.The invention relates to a method in which the end zones are formed by an ion bombardment on the upper surface of the semiconductor wafer with a number of lasers, which wafer at the area of the mirror (cleavage) faces to be formed is provided with grooves which do not extend up to the active layer, in which grooves the end zones are provided via an ion bombardment through the active layer.
    Type: Grant
    Filed: September 23, 1985
    Date of Patent: June 9, 1987
    Assignee: U.S. Philips Corporation
    Inventors: Johannes A. De Poorter, Peter J. De Waard, Rudolf P. Tijburg, Gerardus L. Dinghs
  • Semiconductor laser with end zones for reducing non-radiating recombination
    Patent number: 4558448
    Abstract: A semiconductor laser having mirror faces serving as resonators, in which the active laser region includes end zones adjoining the mirror faces which have implanted ions, preferably protons, with associated crystal damage. The end zones have a length which is at least equal to the diffusion length of the recombining charge carriers in the end zones. As a result of the high recombination rate in the end zones substantially no non-radiating recombination occurs at the mirror faces, so that mirror erosion is avoided.
    Type: Grant
    Filed: August 27, 1982
    Date of Patent: December 10, 1985
    Assignee: U.S. Philips Corporation
    Inventors: Johannes A. dePoorter, Peter J. deWaard, Rudolf P. Tijburg, Gerardus L. Dinghs