Abstract: A three-dimensional, one transistor cell arrangement for dynamic semiconductor memories utilizing a trench capacitor in the substrate, and provided with a switching field effect transistor including an insulated gate electrode connected to the source/drain zone, the bit line contact for the connection of the switching transistor being arranged to be self-adjusted on the drain region in the semiconductor substrate, and overlapping the gate electrode with insulating layers on all sides. It also overlaps the neighboring field oxide region. The insulation layer laying beneath the bit line and over the gate level is a triple layer composed of silicon oxide/silicon nitride/silicon oxide, and in the through hole etching which is carried out by specific etching steps, there exists a self-adjusted overlapping contact. By eliminating the imprecision caused by the lithography, the space requirement of a memory cell can be reduced by about 20%. The invention is particularly utilized in the manufacture of 4 megabit DRAMs.