Abstract: The invention relates to a method for the plasma-assisted synthesis of organohalosilanes in which organohalosilanes of the general empirical formula R1mR2oSiX4-p (X=F, Cl, Br or I; p=1-4; p=m+o; m=1-4; o=0-3; R1, R2=alkyl, alkenyl, alkinyl, aryl) and/or carbosilanes of the general empirical formula R3qSiX3-qCH2SiR4rX3-r (X=F, Cl, Br or I; q=0-3; r=0-3; R3, R4=alkyl, alkenyl, alkinyl, aryl) are formed by activating a plasma in a mixture of one or more volatile organic compounds from the group of alkanes, alkenes, alkines and aromates with SiX4 and/or organohalosilanes RnSiX4-n (X=F, Cl, Br oder I; n=1-4; R=alkyl, alkenyl, alkinyl, aryl).

Abstract: The present invention relates to a halogenated polysilane as a pure compound or a mixture of compounds each having at least one direct Si—Si bond, whose substituents consist exclusively of halogen or of halogen and hydrogen and in the composition of which the atomic ratio of substituent to silicon is at least 1:1.

Abstract: The present invention relates to a halogenated polysilane as a pure compound or mixture of compounds each having at least one direct Si—Si bond, whose substituents consist exclusively of halogen or of halogen and hydrogen and in whose composition the atomic ratio substituent:silicon is greater than 1:1.

Abstract: A method for removing impurities from silicon includes A) providing metallic silicon having impurities, B) mixing the metallic silicon with at least one halogenated polysilane of Formula SiXn, where X is halogen, which may be partially replaced by hydrogen, and where 1<n<2.5, and C) heating the metallic silicon so that there is at least partly a reaction of the impurities with the at least one halogenated polysilane or with a decomposition product of the at least one halogenated polysilane, wherein C) may take place before, during and/or after B).

Abstract: The invention relates to a method for producing halogenated oligomers and/or halogenated polymers of elements of the third to fifth main group, wherein the halogenated oligomers and/or halogenated polymers are synthesized from a first chain-forming agent and a second chain-forming agent in a plasma-chemical reaction. At least one of the two chain-forming agents is a halogen compound of an element of the third to fifth main group.

Abstract: A method and a device produce short-chain halogenated polysilanes and/or short-chain halogenated polysilanes and halide-containing silicon by thermolytic decomposition of long-chain halogenated polysilanes. The thermolytic decomposition of long-chain halogenated polysilanes diluted with low-molecular halosilanes is carried out under an atmosphere of halosilanes, thereby ensuring the production of such products at industrial scale in a simple and cost-effective manner.

Abstract: The invention describes a process for removing nonmetallic impurities from metallurgical silicon. A melt is produced from metallurgical silicon and halide-containing silicon. As a result, the impurities are sublimed out and removed from the melt in the form of nonmetal halides. Compared with the known process, in which gaseous halogen is blown through an Si melt, the novel process can be carried out in a particularly simple and efficient manner.

Abstract: A method produces hexachlorodisilane. Hexachlorodisilane is obtained by oxidative splitting of the chlorinated polysilane of the empirical formula SiClx (x=0,2-0,8) using chlorine gas. The hexachlorodisilane is selectively obtained with a high yield.

Abstract: The invention relates to nanowires which consist of or comprise semiconductor materials and are used for applications in photovoltaics and electronics and to a method for the production thereof. The nanowires are characterized in that they are obtained by a novel method using novel precursors. The precursors represent compounds, or mixtures of compounds, each having at least one direct Si—Si and/or Ge—Si and/or Ge—Ge bond, the substituents of which consist of halogen and/or hydrogen, and in the composition of which the atomic ratio of substituent:metalloid atoms is at least 1:1.

Abstract: Bodies coated with a SiC layer or with a multilayer coating system that include at least a SiC hard material layer, wherein the SiC layer consists of halogen-containing nanocrystalline 3C—SiC or a mixed layer which consists of halogen-containing nanocrystalline 3C—SiC and amorphous SiC or halogen-containing nanocrystalline 3C—SiC and amorphous carbon.

Abstract: Kinetically stable halogenated polysilanes include mixture of compounds having respectively at least four silicon atoms bound together, the substituents thereof comprising chlorine, and chlorine and hydrogen, and in the composition thereof, the atomic ratio of substituent to silicon is at least 1:1, wherein a) the kinetically stable halogenated polysilanes have a kinetically high stability in relation to oxidative splitting by chlorine, and the degree of conversion at temperatures of 120° C. within 10 hours with an excess of chlorine gas at 1013 hPa does not exceed 30 mol %, and b) the kinetically stable halogenated polysilanes have a percentage of branching points in the polysilane molecules of more than 8 mol %.

Abstract: A fuel cell supply device that generates hydrogen for fuel cells in an aircraft includes a reaction chamber which reacts hydrogenated polysilanes or mixtures thereof with water; a feed device that feeds at least one reactant into the reaction chamber; and a discharge device that leads hydrogen formed in the reaction to a fuel cell.

Abstract: The invention relates to nanowires which consist of or comprise semiconductor materials and are used for applications in photovoltaics and electronics and to a method for the production thereof. The nanowires are characterized in that they are obtained by a novel method using novel precursors. The precursors represent compounds, or mixtures of compounds, each having at least one direct Si—Si and/or Ge—Si and/or Ge—Ge bond, the substituents of which consist of halogen and/or hydrogen, and in the composition of which the atomic ratio of substituent:metalloid atoms is at least 1:1.

Abstract: The invention describes a process for removing nonmetallic impurities from metallurgical silicon. A melt is produced from metallurgical silicon and halide-containing silicon. As a result, the impurities are sublimed out and removed from the melt in the form of nonmetal halides. Compared with the known process, in which gaseous halogen is blown through an Si melt, the novel process can be carried out in a particularly simple and efficient manner.

Abstract: A chlorinated oligogermane as a pure compound or mixture of compounds which each have at least one direct Ge—Ge bond, substituents of which include chlorine or chlorine and hydrogen and atom ratio for substituent:germanium is at least 2:1 in the composition thereof, wherein a) the mixture has on average a Ge:Cl ratio of 1:1 to 1:3, or the pure compound has a Ge:Cl ratio of 1:2 to 1:2.67, and b) the mixture has an average number of germanium atoms of 2 to 8.

Abstract: A method for removing impurities from silicon includes A) providing metallic silicon having impurities, B) mixing the metallic silicon with at least one halogenated polysilane of Formula SiXn, where X is halogen, which may be partially replaced by hydrogen, and where 1<n<2.5, and C) heating the metallic silicon so that there is at least partly a reaction of the impurities with the at least one halogenated polysilane or with a decomposition product of the at least one halogenated polysilane, wherein C) may take place before, during and/or after B).

Abstract: A method produces hexachlorodisilane. Hexachlorodisilane is obtained by oxidative splitting of the chlorinated polysilane of the empirical formula SiClx (x=0,2-0,8) using chlorine gas. The hexachlorodisilane is selectively obtained with a high yield.

Abstract: A process for preparing hydrogenated polygermane as a pure compound or mixture of compounds, including hydrogenating halogenated polygermane.

Abstract: Kinetically stable halogenated polysilanes include mixture of compounds having respectively at least four silicon atoms bound together, the substituents thereof comprising chlorine, and chlorine and hydrogen, and in the composition thereof, the atomic ratio of substituent to silicon is at least 1:1, wherein a) the kinetically stable halogenated polysilanes have a kinetically high stability in relation to oxidative-splitting by chlorine, and the degree of conversion at temperatures of 120° C. within 10 hours with an excess of chlorine gas at 1013 hPa does not exceed 30 mol %, and b) the kinetically stable halogenated polysilanes have a percentage of branching points in the polysilane molecules of more than 8 mol %.

Abstract: A method for producing oligosilanes by reacting halogenated oligosilanes with a metal hydride includes a reaction occurring in the presence of a catalyst and an alkali metal halide, the catalyst including a halide of a multivalent metal; and the reaction occurs in an ethereal solution.