Abstract: The invention discloses a method for the chemical-mechanical polishing of layers composed of metals of the group of platinum metals, particularly iridium. In the CMP process, high erosion rates for iridium and a high selectivity relative to silicon oxide are achieved upon employment of a polishing fluid that contains 1 through 6% by weight abrasive particles, 2 through 20% by weight of at least one oxidation agent selected from the group comprising Ce(IV) salts, salts of chloric acid, salts of peroxodisulfuric acid, hydrogen peroxide and salts of hydrogen peroxide, and 74 through 97% by weight water. This enables the structuring of iridium layers with the assistance of an oxide mask and a CMP process.

Abstract: The invention discloses a method for the chemical-mechanical polishing of layers composed of metals of the group of platinum metals, particularly iridium. In the CMP process, high erosion rates for iridium and a high selectivity relative to silicon oxide are achieved upon employment of a polishing fluid that contains 1 through 6% by weight abrasive particles, 2 through 20% by weight of at least one oxidation agent selected from the group comprising Ce(IV) salts, salts of chloric acid, salts of peroxodisulfuric acid and hydrogen peroxide as well as the salts thereof, and 97 through 74% by weight water. This enables the structuring of iridium layers with the assistance of an oxide mask and a CMP process.

Abstract: The process for the direct preparation of cleaning solutions for semiconductor manufacture comprises producing the cleaning solutions directly at the site of use by mixing a gas with high-purity water, with a static mixer system being used. At least one of the gases NH3, HCl, ozone or HF is added.