Abstract: A static memory is constructed in a plurality of hierarchy levels. Beneficial realization possibilities are set forth with respect to the surface utilization for the drive and read-out circuits in the second hierarchy level which are especially critical. Memory cells that supply a strong cell signal are advantageously utilized so that a low expense is needed in the read circuit. By displacing periphery circuits into higher hierarchy levels, a short access time and a reduced surface requirement arise.

Abstract: Static memory having pipeline registers. The static memory has a plurality of hierarchy levels connected by pipeline registers. This architecture is very beneficial since the area requirements for the drive and read-out circuits in the first hierarchy level are especially critical. Advantageously, memory cells are used which have write and read word lines as well as separate write and read data lines and which also supply a strong cell signal so that only a few components are needed for the read circuit. A new clock format with an arrangement of pipeline registers is proposed for the appertaining memory for which power consumption is reduced by disconnecting the clocks in the lower hierarchy levels, resulting in increased area savings.

Abstract: Memory cells are disclosed that avoid the utilization of analog circuits in the memory peripheral circuits when they are utilized in static memory modules and that intended to enhance the disturbed reliability when confronted by technology modifications and parameter fluctuations. Write-in thereby occurs from a write data line via a write selection transistor and read-out occurs via a read selection transistor onto a read data line. A second inverter formed of two field effect transistors serves as a feedback element in order to statically maintain the cell information. Due to an implemented asymmetry in the dimensioning between the first and second inverters, the memory cell is significantly less susceptible to information loss upon read-out when compared to a heretofore known memory cell. A precharging of the read data line is not required with these memory cells.

Abstract: A read amplifier formed of a load component (L), a differential amplifier component (DIFF), a compensation transistor (N6), a switching transistor (P1) connected between a supply voltage (V.sub.DD) and the load component (L). The pre-loading potential of the read amplifier at its outputs LA, LA is about 2.5 volts. During the pre-loading phase, the two supply voltages (V.sub.DD, V.sub.22 =ground) are disconnected and the pre-loading potential is established by compensation of capacitances at the outputs LA, LA which results in an improved read amplifier.