Patents by Inventor Gerd O. Mueller

Gerd O. Mueller has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10312422
    Abstract: Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element.
    Type: Grant
    Filed: February 27, 2017
    Date of Patent: June 4, 2019
    Assignee: Lumileds LLC
    Inventors: Michael D. Camras, Michael R. Krames, Wayne L. Snyder, Frank M. Steranka, Robert C. Taber, John J. Uebbing, Douglas W. Pocius, Troy A. Trottier, Christopher H. Lowery, Gerd O. Mueller, Regina B. Mueller-Mach
  • Patent number: 10290775
    Abstract: A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.
    Type: Grant
    Filed: July 11, 2017
    Date of Patent: May 14, 2019
    Assignee: Lumileds LLC
    Inventors: Gerd O. Mueller, Regina B. Mueller-Mach, Michael R. Krames, Peter J. Schmidt, Hans-Helmut Bechtel, Joerg Meyer, Jan de Graaf, Theo Arnold Kop
  • Patent number: 9818916
    Abstract: Phosphor-converted light emitting diodes comprising a blue or near-UV emitting semiconductor device, a yellow-green phosphor, and a red phosphor exhibit incandescent-like dimming behavior in that the Correlated Color Temperature of a white light output decreases with reduced brightness.
    Type: Grant
    Filed: September 1, 2016
    Date of Patent: November 14, 2017
    Inventors: Gerd O. Mueller, Regina B. Mueller-Mach
  • Publication number: 20170309791
    Abstract: A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.
    Type: Application
    Filed: July 11, 2017
    Publication date: October 26, 2017
    Inventors: Gerd O. Mueller, Regina B. Mueller-Mach, Michael R. Krames, Peter J. Schmidt, Hans-Helmut Bechtel, Joerg Meyer, Jan de Graaf, Theo Arnold Kop
  • Publication number: 20170301838
    Abstract: Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element.
    Type: Application
    Filed: February 27, 2017
    Publication date: October 19, 2017
    Inventors: Michael D. Camras, Michael R. Krames, Wayne L. Snyder, Frank M. Steranka, Robert C. Taber, John J. Uebbing, Douglas W. Pocius, Troy A. Trottier, Christopher H. Lowery, Gerd O. Mueller, Regina B. Mueller-Mach
  • Patent number: 9722148
    Abstract: A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.
    Type: Grant
    Filed: May 9, 2016
    Date of Patent: August 1, 2017
    Assignee: Lumileds LLC
    Inventors: Gerd O. Mueller, Regina B. Mueller-Mach, Michael R. Krames, Peter J. Schmidt, Hans-Helmut Bechtel, Joerg Meyer, Jan de Graaf, Theo Arnold Kop
  • Patent number: 9640724
    Abstract: A III-nitride light emitting layer is disposed between an n-type region and a p-type region in a double heterostructure. At least a portion of the III-nitride light emitting layer has a graded composition.
    Type: Grant
    Filed: September 30, 2014
    Date of Patent: May 2, 2017
    Assignee: Lumileds LLC
    Inventors: Yu-Chen Shen, Nathan F. Gardner, Satoshi Watanabe, Michael R. Krames, Gerd O. Mueller
  • Publication number: 20170117440
    Abstract: A III-nitride light emitting layer is disposed between an n-type region and a p-type region in a double heterostructure. At least a portion of the III-nitride light emitting layer has a graded composition.
    Type: Application
    Filed: September 30, 2014
    Publication date: April 27, 2017
    Inventors: YU-CHEN SHEN, NATHAN F. GARDNER, SATOSHI WATANABE, MICHAEL R. KRAMES, GERD O. MUELLER
  • Patent number: 9583683
    Abstract: Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element.
    Type: Grant
    Filed: December 20, 2013
    Date of Patent: February 28, 2017
    Assignee: Lumileds LLC
    Inventors: Michael D. Camras, Michael R. Krames, Wayne L. Snyder, Frank M. Steranka, Robert C. Taber, John J. Uebbing, Douglas W. Pocius, Troy A. Trottier, Christopher H. Lowery, Gerd O. Mueller, Regina B. Mueller-Mach
  • Publication number: 20160372639
    Abstract: Phosphor-converted light emitting diodes comprising a blue or near-UV emitting semiconductor device, a yellow-green phosphor, and a red phosphor exhibit incandescent-like dimming behavior in that the Correlated Color Temperature of a white light output decreases with reduced brightness.
    Type: Application
    Filed: September 1, 2016
    Publication date: December 22, 2016
    Inventors: Gerd O. MUELLER, Regina B. MUELLER-MACH
  • Publication number: 20160254418
    Abstract: A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.
    Type: Application
    Filed: May 9, 2016
    Publication date: September 1, 2016
    Inventors: Gerd O. Mueller, Regina B. Mueller-Mach, Michael R. Krames, Peter J. Schmidt, Hans-Helmut Bechtel, Joerg Meyer, Jan de Graaf, Theo Arnold Kop
  • Patent number: 9359260
    Abstract: A semiconductor light emitting device comprising a light emitting layer disposed between an n-type region and a p-type region is combined with a ceramic layer which is disposed in a path of light emitted by the light emitting layer. The ceramic layer is composed of or includes a wavelength converting material such as a phosphor. Luminescent ceramic layers according to embodiments of the invention may be more robust and less sensitive to temperature than prior art phosphor layers. In addition, luminescent ceramics may exhibit less scattering and may therefore increase the conversion efficiency over prior art phosphor layers.
    Type: Grant
    Filed: February 20, 2008
    Date of Patent: June 7, 2016
    Assignee: Lumileds LLC
    Inventors: Gerd O. Mueller, Regina B. Mueller-Mach, Michael R. Krames, Peter J. Schmidt, Hans-Helmut Bechtel, Joerg Meyer, Jan de Graaf, Theo Arnold Kop
  • Publication number: 20160093770
    Abstract: A III-nitride light emitting layer is disposed between an n-type region and a p-type region in a double heterostructure. At least a portion of the III-nitride light emitting layer has a graded composition.
    Type: Application
    Filed: September 30, 2014
    Publication date: March 31, 2016
    Inventors: YU-CHEN SHEN, NATHAN F. GARDER, SATOSHI WATANABE, MICHAEL R. KRAMES, GERD O. MUELLER
  • Patent number: 8847252
    Abstract: A III-nitride light emitting layer is disposed between an n-type region and a p-type region in a double heterostructure. At least a portion of the III-nitride light emitting layer has a graded composition.
    Type: Grant
    Filed: June 30, 2009
    Date of Patent: September 30, 2014
    Assignee: Philips Lumileds Lighting Company, LLC
    Inventors: Yu-Chen Shen, Nathan F. Gardner, Satoshi Watanabe, Michael R. Krames, Gerd O. Mueller
  • Publication number: 20140191265
    Abstract: Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent optical element.
    Type: Application
    Filed: December 20, 2013
    Publication date: July 10, 2014
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V
    Inventors: MICHAEL D. CAMRAS, MICHAEL R. KRAMES, WAYNE L. SNYDER, FRANK M. STERANKA, ROBERT C. TABER, JOHN J. UEBBING, DOUGLAS W. POCIUS, TROY A. TROTTIER, CHRISTOPHER H. LOWERY, GERD O. MUELLER, REGINA B. MUELLER-MACH
  • Patent number: 8748923
    Abstract: A material such as a phosphor is optically coupled to a semiconductor structure including a light emitting region disposed between an n-type region and a p-type region, in order to efficiently extract light from the light emitting region into the phosphor. The phosphor may be phosphor grains in direct contact with a surface of the semiconductor structure, or a ceramic phosphor bonded to the semiconductor structure, or to a thin nucleation structure on which the semiconductor structure may be grown. The phosphor is preferably highly absorbent and highly efficient. When the semiconductor structure emits light into such a highly efficient, highly absorbent phosphor, the phosphor may efficiently extract light from the structure, reducing the optical losses present in prior art devices.
    Type: Grant
    Filed: March 11, 2011
    Date of Patent: June 10, 2014
    Assignee: Philips Lumileds Lighting Company LLC
    Inventors: Michael R. Krames, Gerd O. Mueller
  • Patent number: 8748921
    Abstract: A semiconductor light emitting device is provided with a separately fabricated wavelength converting element. The wavelength converting element, of e.g., phosphor and glass, is produced in a sheet that is separated into individual wavelength converting elements, which are bonded to light emitting devices. The wavelength converting elements may be grouped and stored according to their wavelength converting properties. The wavelength converting elements may be selectively matched with a semiconductor light emitting device, to produce a desired mixture of primary and secondary light.
    Type: Grant
    Filed: March 13, 2009
    Date of Patent: June 10, 2014
    Assignee: Philips Lumileds Lighting Company LLC
    Inventors: Paul S. Martin, Gerd O. Mueller, Regina B. Mueller-Mach, Helena Ticha, Ladislav Tichy
  • Patent number: 8628985
    Abstract: Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers comprising an active region. The stack is bonded to a transparent lens having a refractive index for light emitted by the active region preferably greater than about 1.5, more preferably greater than about 1.8. A method of bonding a transparent lens to a light emitting device having a stack of layers including semiconductor layers comprising an active region includes elevating a temperature of the lens and the stack and applying a pressure to press the lens and the stack together. Bonding a high refractive index lens to a light emitting device improves the light extraction efficiency of the light emitting device by reducing loss due to total internal reflection. Advantageously, this improvement can be achieved without the use of an encapsulant.
    Type: Grant
    Filed: October 4, 2011
    Date of Patent: January 14, 2014
    Assignee: Philips Lumileds Lighting Company LLC
    Inventors: Michael D. Camras, Michael R. Krames, Wayne L. Snyder, Frank M. Steranka, Robert C. Taber, John J. Uebbing, Douglas W. Pocius, Troy A. Trottier, Christopher H. Lowery, Gerd O. Mueller, Regina B. Mueller-Mach
  • Patent number: 8445929
    Abstract: Embodiments of the invention include a light emitting structure comprising a light emitting layer. A first luminescent material comprising a phosphor is disposed in a path of light emitted by the light emitting layer. A second luminescent material comprising a semiconductor is also disposed in a path of light emitted by the light emitting layer. The second luminescent material is configured to absorb light emitted by the light emitting layer and emit light of a different wavelength. In some embodiments, one of the first and second luminescent materials may be bonded to the semiconductor structure.
    Type: Grant
    Filed: March 15, 2010
    Date of Patent: May 21, 2013
    Assignee: Philips Lumileds Lighting Company LLC
    Inventors: Michael R. Krames, Gerd O. Mueller
  • Patent number: 8415694
    Abstract: A device includes a light emitting structure and a wavelength conversion member comprising a semiconductor. The light emitting structure is bonded to the wavelength conversion member. In some embodiments, the light emitting structure is bonded to the wavelength conversion member with an inorganic bonding material. In some embodiments, the light emitting structure is bonded to the wavelength conversion member with a bonding material having an index of refraction greater than 1.5.
    Type: Grant
    Filed: February 23, 2010
    Date of Patent: April 9, 2013
    Assignee: Philips Lumileds Lighting Company LLC
    Inventors: Michael D. Camras, Michael R. Krames, Wayne L. Snyder, Frank M. Steranka, Robert C. Taber, John J. Uebbing, Douglas W. Pocius, Troy A. Trottier, Christopher H. Lowery, Gerd O. Mueller, Regina B. Mueller-Mach, Gloria E. Hofler