Abstract: In order to improve the detectability of defects in structures incorporated beneath the surface of a wafer, it is suggested to acquire an IR subimage of the illuminated wafer with an IR image acquisition device and a VIS subimage with a VIS image acquisition device. The acquisition is performed simultaneously and is controlled such that the same area of the wafer is imaged sharply by both image acquisition devices. An image processor is used to determine whether a detected defect is attributable to a defect on the surface or to a defect of the structures located beneath the surface.

Abstract: A method and a device for improving the measurement accuracy in the nm range for optical systems are disclosed. The object is provided with a plurality of structures oriented in the X and Y-coordinate direction. The light beam coming from at least one light source defines an optical illumination path.

Abstract: The invention relates to a method for optical measurement of an OPC structure (306), having a pre-determined structure (302) on a photo-mask, in order to determine a measurement of the structure in at least one direction, whereby, firstly, a region (300) is determined on the photo-mask, which comprises the OPC structure (306) to be measured. The intensity of the determined region (300) is then scanned in a first direction and the region in which the intensity passes a threshold is determined for each scan. The maximum separation between an edge (308) of the structure (302) and an edge (312) of the corresponding OPC structure (306) is determined, based on the difference of the determined regions.

Abstract: A device 1 is disclosed for inspecting, measuring defined structures, simulating structures and structural defects, repair of and to structures, and post-inspecting defined object sites on a microscopic component 2 with an immersion objective 8a. The device 1 comprises a stage that is movable in the x-coordinate direction and in the y-coordinate direction and a holder 42 for the microscopic component 2, whereby the holder 42 is placed on the stage 4 with the microscopic component 2 in it. The holder 42 has a reservoir 51a with immersion or cleaning fluid, respectively. The stage 4 is movable such that the immersion objective 8a is located directly above the reservoir 51a and may dip into the fluid with its front-most lens.

Abstract: An apparatus for measuring feature widths on masks 1 for the semiconductor industry is disclosed. The apparatus encompasses a carrier plate 16 that is retained in vibrationally decoupled fashion in a base frame 14; a scanning stage 18, arranged on the carrier plate 16, that carries a mask 1 to be measured, the mask 1 defining a surface 4; and an objective 2 arranged opposite the mask 1. A liquid 25 is provided between the objective 2 and the surface 4 of the mask 1.

Abstract: The invention relates to a method for optical measurement of an OPC structure (306), having a pre-determined structure (302) on a photo-mask, in order to determine a measurement of the structure in at least one direction, whereby, firstly, a region (300) is determined on the photo-mask, which comprises the OPC structure (306) to be measured. The intensity of the determined region (300) is then scanned in a first direction and the region in which the intensity passes a threshold is determined for each scan. The maximum separation between an edge (308) of the structure (302) and an edge (312) of the corresponding OPC structure (306) is determined, based on the difference of the determined regions.

Abstract: A device (1) is disclosed for inspecting, measuring defined structures, simulating structures and structural defects, repair of and to structures, and post-inspecting defined object sites on a microscopic component (2) with an immersion objective (8a). The device (1) comprises a stage that is movable in the x-coordinate direction and in the y-coordinate direction and a holder (42) for the microscopic component (2), whereby the holder (42) is placed on the stage (4) with the microscopic component (2) in it. The holder (42) has a reservoir (51a) with immersion or cleaning fluid, respectively. The stage (4) is movable such that the immersion objective (8a) is located directly above the reservoir (51a) and may dip into the fluid with its front-most lens.

Abstract: An apparatus for measuring feature widths on masks 1 for the semiconductor industry is disclosed. The apparatus encompasses a carrier plate 16 that is retained in vibrationally decoupled fashion in a base frame 14; a scanning stage 18, arranged on the carrier plate 16, that carries a mask 1 to be measured, the mask 1 defining a surface 4; and an objective 2 arranged opposite the mask 1. A liquid 25 is provided between the objective 2 and the surface 4 of the mask 1.