Patents by Inventor Gerd Schoene

Gerd Schoene has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing through-contacts in semi-conductor wafers via production of through-plated holes
    Patent number: 8455355
    Abstract: The invention relates to a method for producing vertical through-contacts (micro-vias) in semi-conductor wafers in order to produce semi-conductor components, i.e. contacts on the front side of the wafer through the semi-conductor wafer to the rear side of the wafer. The invention also relates to a method which comprises the following steps: blind holes on the contact connection points are laser drilled from the rear side of the wafer into the semi-conductor substrate, the wafer is cleaned, the semi-conductor substrate is plasma etched in a material selected manner until the active layer stack of the wafer is reached, the active layer stack of the wafer is plasma etched in a material selective manner until the contacts, which are to be connected to the rear side of the wafer, are reached, a plating base is applied to the rear side of the wafer and into the blind holes and gold is applied by electrodeposition onto the metallizied rear side of the wafer and the blind holes.
    Type: Grant
    Filed: July 24, 2006
    Date of Patent: June 4, 2013
    Assignee: Forschungsverbund Berlin E.V.
    Inventors: Olaf Krueger, Gerd Schoene, Wilfred John, Tim Wernicke, Joachim Wuerfl
  • Method for Producing Through-Contacts in Semi-Conductor Wafers
    Publication number: 20080286963
    Abstract: The invention relates to a method for producing vertical through-contacts (micro-vias) in semi-conductor wafers in order to produce semi-conductor components, i.e. contacts on the front side of the wafer through the semi-conductor wafer to the rear side of the wafer. The invention also relates to a method which comprises the following steps: blind holes on the contact connection points are laser drilled from the rear side of the wafer into the semi-conductor substrate, the wafer is cleaned, the semi-conductor substrate is plasma etched in a material selected manner until the active layer stack of the wafer is reached, the active layer stack of the wafer is plasma etched in a material selective manner until the contacts, which are to be connected to the rear side of the wafer, are reached, a plating base is applied to the rear side of the wafer and into the blind holes and gold is applied by electrodeposition onto the metallizied rear side of the wafer and the blind holes.
    Type: Application
    Filed: July 24, 2006
    Publication date: November 20, 2008
    Inventors: Olaf Krueger, Gerd Schoene, Wilfred John, Tim Wernicke, Joachim Wuerfl