Patents by Inventor Gerd Schorer

Gerd Schorer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of eliminating lattice defects in a semiconductor device
    Patent number: 4332627
    Abstract: The invention relates to a semiconductor device and to a method of fully eliminating lattice defects in N-conductive zones of a semiconductor device which are generated by ion implantation of phosphorus. According to the invention, conductivity-determining ions like antimony or arsenic are implanted into phosphorus-doped zones of a semi-conductor device. A dosage of 1 to 10% of the phosphorus dose is used. The implantation of the antimony or arsenic takes place with the same, or with a greater implantation depth than the phosphorus depth. Subsequent to the antimony/arsenic implantation the device is annealed in an inert gas atmosphere at approximately 1000.degree. C.
    Type: Grant
    Filed: April 14, 1980
    Date of Patent: June 1, 1982
    Assignee: International Business Machines Corporation
    Inventors: Alfred Schmitt, Gerd Schorer