Abstract: Disclosed is a method of treating the surface of an electrically conducting substrate surface wherein a tool comprising an ion-conducting solid material is brought into contact at least in some areas with the substrate surface. The tool conducts the metal ions of the substrate and an electric potential is applied so that an electrical potential gradient is applied between the substrate surface and the tool in such a manner that metal ions are drawn from the substrate surface or deposited onto the substrate surface by means of the tool.

Abstract: Process for polishing silicon surfaces, in which a dispersion which comprises cerium oxide particles, at least one polymeric, anionic dispersing additive and at least one oxidizing agent and which has a pH of 7 to 10.5 is used, said cerium oxide particles having a positive charge and polymeric, anionic dispersing additive and oxidizing agent being soluble in the liquid phase of the dispersion.

Abstract: Disclosed is a method of treating the surface of an electrically conducting substrate surface wherein a tool comprising an ion-conducting solid material is brought into contact at least in some areas with the substrate surface, the tool is able to conduct the metal ions of the substrate and an electric potential is applied so that an electric potential gradient is applied between the substrate surface and the tool in such a manner that metal ions are drawn from the substrate surface or deposited onto the substrate surface by means of the tool.

Abstract: A material which has a high removal rate with a simultaneously gentle polishing behavior is to be made available with a composition in the form of a dispersion or a slurry for the chemical-mechanical polishing (CMP) in the production of electronic or microelectronic components, in particular, semiconductor elements, and/or a mechanical component, in particular, a microelectromechanical component or semiconductor element (MEMS). This is attained in that the composition contains titanium oxide hydrate particles with the approximation formula TiO2*xH2O*yH2SO4, wherein the H2O content of the titanium oxide hydrate particles is 4-25 wt %, preferably 2-10 wt %, and the H2SO4 content is 0-15 wt %, preferably 0.1-10 wt %.

Abstract: In a method for the treatment of an object made of silicon or an inorganic, optionally organically modified, silicon compound, an oxidizing agent is prepared by electrolysis of an aqueous solution in an electrolysis device. The anode of the electrolysis device is a silicon electrode. The anode has an overvoltage for oxygen so that upon electrolysis of water the formation of hydrogen peroxide is preferred over that of oxygen. The aqueous solution used in electrolysis contains at least one reactive component or a constituent that is converted by electrolysis of the solution into a reactive component. The object to be treated is contacted with the freshly prepared oxidizing agent. The oxidizing agent is circulated and returned into the electrolysis device to be regenerated.