Abstract: A method for fabricating a nanostructure comprises the steps of growing a first nanowire on a substrate, forming a dielectric layer on the substrate, the dielectric layer surrounding the first nanowire, wherein a thickness of the dielectric layer is smaller than a length of the first nanowire, and removing the first nanowire from the dielectric layer, thereby exposing an aperture in the dielectric layer.

Abstract: A core-shell nanowire laser structure comprises a substrate (12), an elongated support element (14) extending from the substrate, the support element having a first diameter, and an elongated body element (16) extending on and/or around the support element, the body element having a second diameter at least two times larger than the first diameter, wherein the body element is spaced apart from the substrate.

Abstract: A method for fabricating a nanostructure comprises the steps of growing a first nanowire on a substrate, forming a dielectric layer on the substrate, the dielectric layer surrounding the first nanowire, wherein a thickness of the dielectric layer is smal- ler than a length of the first nanowire, and removing the first nanowire from the dielectric layer, thereby exposing an aperture in the dielectric layer.

Abstract: A core-shell nanowire laser structure comprises a substrate (12), an elongated support element (14) extending from the substrate, the support element having a first diameter, and an elongated body element (16) extending on and/or around the support element, the body element having a second diameter at least two times larger than the first diameter, wherein the body element is spaced apart from the substrate.

Abstract: The invention concerns a structured semiconductor surface as basis for molecular electronics or molecular electronics-based bio-sensors. The starting point is a heterostructure consisting of two undoped layers of a semiconductor material that are separated by an extremely thin (a few nm) layer of a different semiconductor material. This material stack is cleaved perpendicular to the layer planes and the middle layer is selectively etched. Source- and drain contacts for conductive organic “wires” are by built by evaporation with a thin metal film. The middle conductive layer can be employed as electrostatic gate. An assembly for contacting a few up to single wires can be obtained by two sequential separations and evaporations. Possible organic wires are e.g. molecules with conjugated (E-electron system, DNA-oligonucleotides or carbon nanotubes.

Abstract: On-chip integrated detector for analyzing fluids, comprising insulating material partly enclosing a cavity for accommodating an analyte, said cavity being defined at the bottom and at least partly at its sides by said insulating material, and a gateless field effect transistor (FET) formed in a distance from the bottom of the cavity, the sensing surface of which is facing the analyte.

Abstract: In an analyte evaluating device comprising a carrier body that can be bound with an analyte having a fluorescence-labeled part that can emit fluorescence by light received when the distance between the fluorescence-labeled part and the carrier body is enlarged, at least one factor selected from the group consisting of a light irradiation angle, a light irradiation intensity, a light irradiation area, a fluorescence detection angle, a fluorescence detection area, the shape of the carrier body, the surface area of the carrier body, a salt concentration in a medium for use in the detection, and the adhesion density of analytes on the carrier body, is made to be adjustable. A high sensitivity is realized. Evaluation is possible without introducing fluorescence-labeled parts. Evaluation for a tiny amount of sample is possible. It is also possible to evaluate objects in a mixed state. Miniaturized, complex, and integrated devices are possible.

Abstract: A Semiconductor sensor device for the detection of target molecules and molecular interactions, based on Silicon-on-Insulator (SOI) technology.

Abstract: A Semiconductor sensor device for the detection of target molecules and molecular interactions, based on Silicon-on-Insulator (SOI) technology.

Abstract: A heterostructure semiconductor device as a Schottky gate field-effect tristor comprises a semiconductor body including first and second layers made of different semiconductor materials, as gallium arsenide and aluminium gallium arsenide. A narrow heterojunction is formed between the layers. The material of the first layer is pure and comprises a minimum of defects. The second layer comprises a doping material, the concentration of which being at least one order of magnitude higher than the concentration of any doping or impurity material present in the first layer. The semiconductor and doping materials are chosen such that the energy levels occupied by the shallow doping material atoms in said second layer have an energetically more unfavorable position than an adjacent of the energy bands of the first layer so that free charge carriers from the doped second layer can migrate in an adjacent region of the first layer.