Abstract: In an apparatus for crucible-free zone melting, a device for supporting a lower end of the crystalline rod of semiconductor which has a junction with a seed crystal characterized by the support device being formed by a plurality of sections or parts which are moveable relative to each other from a first position spaced or retracted from the seed crystal and the lower end of the rod to enable melting the rod adjacent to the junction and a second position forming a container surrounding the seed crystal and the lower end of the rod for receiving a supporting or stabilizing medium which dampens or prevents vibrations from being applied to the lower end of the rod and the junction. The sections are held in the second position by a holding means which may either be electromagnetic or mechanical.

Abstract: A method for producing highly pure silicon, or another semiconductor material, includes depositing the element from a corresponding reaction gas at the surface of several rod shaped carrier members composed of highly pure material, the carrier members being connected in series and permeated by a heating current supplied by an operational current source. In heating the serially connected carrier members, the members are first preheated by the application of a high voltage from a three phase supply, the carrier members being subdivided into groups with each group charged by a separate phase of the three phase voltage. Preheating is performed prior to connecting all of the carrier members to the operational supply.