Abstract: A process for the preparation of novel polyamides, the use of such polyamides for the production of fibers, sheets and moldings, and fibers, sheets and moldings obtainable from such polyamides, are provided.

Abstract: A fiber containing a longitudinal core (I) of a polymer and a chemically different surrounding sheath (II), wherein said sheath (II) is based on a polyamide containing a sterically hindered piperidine derivative (III) attached to the polymer chain by chemical bonding.

Abstract: A process for the preparation of novel polyamides, the use of such polyamides for the production of fibers, sheets and moldings, and fibers, sheets and moldings obtainable from such polyamides, are provided.

Abstract: A fiber containing a longitudinal core (I) of a polymer and a chemically different surrounding sheath (II), wherein said sheath (II) is based on a polyamide containing a sterically hindered piperidine derivative (III) attached to the polymer chain by chemical bonding.

Abstract: A process for the preparation of novel polyamides, the use of such polyamides for the production of fibers, sheets and moldings, and fibers, sheets and moldings obtainable from such polyamides, are provided.

Abstract: A process for the preparation of novel polyamides, the use of such polyamides for the production of fibers, sheets and moldings, and fibers, sheets and moldings obtainable from such polyamides, are provided.

Abstract: A transistor component is suited for controlling large currents, even given high frequencies. The transistor component includes integrated emitter resistors which are arranged between partial-emitter regions and emitter-metal contacts. The integrated emitter resistors cause a stabilized, uniform current distribution both over the various partial-emitter regions, and within the partial-emitter regions, and bring about an improved current carrying capacity, as well as improved high-frequency properties, particularly in view of the finite magnitude of the extrinsic base resistance.

Abstract: A monolithically integrated circuit in the packed state has at least one characteristic value and/or at least one function which is able to be varied by applying at least one striking potential to at least two of the standard terminal connections leading to the outside of the integrated circuit.

Abstract: In a semiconductor device including a semiconductor body, a continuous oxide layer, a continuous metallization layer, and a diffusion zone, the diffusion zone is located below a portion of the continuous oxide layer to reduce this portion in thickness, and the corresponding part of the metallization layer in the region of the oxide layer portion of reduced thickness forms an undulation which protects the metallization layer against thermal stresses.

Abstract: A monolithically integrated precision reference voltage source by the bandgap principle, suitable for a wide temperature range, is proposed, in which the parabolic course of the temperature response curve of the reference voltage is linearized by process means available in the monolithic integration, dispensing with additional active components such as transistors or diodes. The precision voltage reference source includes two resistors (21, 22), which are represented by the N-doped emitter diffusion zone.

Abstract: A monolithic integrated power transistor chip includes a plurality of transistor cells arranged in two opposite and mutually spaced rows. Each cell has emitter- and collector connection spots arranged side-by-side and connected to corresponding branch conductors directed by rows of connection points extending along opposite edges on the upper surface of the chip.

Abstract: The power supply system for a motor vehicle, includes a battery; a three-phase generator; a connecting line connecting the terminals of the generator and the battery; a rectifier connected electrically to the generator; a voltage regulator for switching an exciter field of the generator on and off to control a voltage actual value at the generator terminals and producing an average field current in the exciter field to maintain a power supply voltage substantially constant regardless of load and speed; and a circuit device for determining and for partially compensating an undesirable direct voltage drop at the generator terminals resulting from a voltage drop in the connecting line caused by load current. The device for determining and for partially compensating is structured to determine an alternating voltage at the generator terminals produced by an alternating current component in the connecting line.

Abstract: An electronic device is suggested which comprises a signal emitting circuit part (1) and a signal processing circuit part (4), at least one line for supplying the signal processing circuit part (4) with operating current and/or at least one signal input line (6) and/or at least one signal output line being guided to the signal processing circuit part (4) from an external circuit. The device includes at least one filter circuit (7) which is connected to the signal processing circuit part (4) and inserted into the signal line (6). The filter circuit (7) comprises additional damping elements for the associated line (6) for damping interference voltage induced by of external high-frequency fields. The amplitude of the interference voltage is greater, preferably substantially greater, than a linear control range of circuit elements of the signal processing circuit part (4). Damping elements and filter circuits are monolithically integrated together with the signal processing circuit part (4).

Abstract: A current regulator, preferably constructed in accordance with monolithic integrated technology, for high currents is proposed, whose output current (I) is a function of an input quantity (E). In this case the output current (I) is less in a range of the input quantity (E) different from a value of zero than the value given in this range by the functional relationship between the input quantity (E) and the output current (I).

Abstract: A voltage regulator (4) for a generator (1), particularly for use in motor vehicles, is provided which produces an average field current in the exciting winding (2) of the generator (1) by switching on and off the field current by a controlled semiconductor switch in cooperation with a recovery diode in such a way that the generator voltage remains approximately constant independently of the load and the speed. The voltage regulator (4) contains an integrally acting component for compensating for load-dependent and speed-dependent errors, which component is produced by a nonlinearly working integrator for the relative turn-on period of the current through the exciting winding (2) and is fed back into the regulating circuit of the voltage regulator (4).

Abstract: An electronic circuit device having a monolithic integrated power transistor is disclosed that comprises a parallel connection of a plurality of individual partial transistors (1, 2, 3, . . . , n). In order to stabilize the distribution of the sum current to the individual partial transistors (1, 2, 3, . . . , n) resistors (41, 42, 43, . . . 4n) are provided in their emitter lines. At least one of the resistors (41, 42, 43, . . . 4n) in the emitter lines of the partial transistors (1, 2, 3, . . . , n) serves as measurement resistor for producing a signal voltage proportional to the current to provide an electronic circuit device having current regulation or current limiting, as shown in FIG. 2.

Abstract: A high-frequency power transistor is suggested in which the emitter and base contacts, as well as the collector contacts, occur in a principle plane on the silicon layer. A metallization can be arranged on the oppositely located second principle plane, which enables a connection with the heat sink in an easy manner. Shield grids can be provided within the substrate in order to compensate for the effect of unwanted depletion-layer diodes to a great extent.

Abstract: A voltage regulator for generators is proposed which, compared with a voltage regulator known, for example, from DE-PS 27 38 897, is supplemented in such a manner that an integral component corresponding to the relative operating time of the field current is formed and this component is fed into the actual control loop. The relative operating time of the field current in this arrangement can be obtained more or less directly from the switching characteristic of the switching transistor (20) for the field current or by means of a sensing resistor (33) in series with the exciter winding (21).

Abstract: A power transistor monolithic integrated structure produced by a bipolar-epitaxial technology includes a plurality of parallel connected transistor cellular structures each containing at least one component transistor. The base of each component transistor is coupled to a common base control conductor via a protective resistor and a fuse link which melts in the event of a defect in the transistor cell. Another fuse link is incorporated in the branch conductors leading from the collectors of respective component transistor to a common conductor web mounted on the surface of the transistor chip. All transistor cellular structures are electrically isolated one from each other during the manufacturing process.

Abstract: A semiconductor means is integrated monolithically on a substrate and comprises at least one power diode (3), its cathode being at a higher potential (6) than the potential (5) of the substrate. Its anode forms the emitter and its cathode forms the base of a parasitic substrate transistor (4). In order to reduce the power loss caused by means of this parasitic substrate transistor (4), means (8) for increasing the collector path resistance (41) of the parasitic transistor (4) are provided.