Patents by Inventor Gerhard Eilmsteiner

Gerhard Eilmsteiner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210199768
    Abstract: An optical device (306) includes an internal cavity and an emitter (102) disposed in the internal cavity (210). The emitter is operable to emit a first light wave (220). The optical device also includes a detector (104) disposed in the internal cavity. The detector is operable to detect a second light wave (225) that is based on the first light wave. The second light wave is susceptible to being coupled with an undesired light wave (235) that is based on the first light wave. The optical device further includes an interference filter (310) disposed on the detector. The interference filter has a filter property that causes the interference filter to attenuate the interfering light wave.
    Type: Application
    Filed: May 20, 2019
    Publication date: July 1, 2021
    Applicant: ams AG
    Inventors: Matt KROESE, Gerhard EILMSTEINER, Josef KRIEBERNEGG, Desislava OPPEL
  • Publication number: 20210164831
    Abstract: A filter assembly includes comprises an incident medium, a spacer, at least one dielectric filter and an exit medium. The spacer is arranged between the incident medium and the at least one dielectric filter such that the incident medium and the at least one dielectric filter are spaced apart by a working distance and thereby enclose a medium of lower index of refraction than the incident medium. The at least one dielectric filter is arranged on the exit medium.
    Type: Application
    Filed: July 26, 2019
    Publication date: June 3, 2021
    Inventors: Gerhard EILMSTEINER, Desislava OPPEL, Deborah MORECROFT, Jens HOFRICHTER
  • Patent number: 10976200
    Abstract: An optical sensing device comprises a photodetector array comprising at least one first photodetector and at least one second photodetector, the photodetector array being arranged on a semiconductor substrate. The optical sensing device further comprises a filter stack arranged on the substrate and covering the photodetector array. The filter stack comprises at least two first lower dielectric mirrors and at least two second lower dielectric mirrors, where a first and a second lower mirror are arranged above the first photodetector and a first and a second lower mirror are arranged above the second photodetector, and where the first lower mirrors have a different thickness in vertical direction which is perpendicular to the main plane of extension of the substrate than the second lower mirrors. The filter stack further comprises a spacer stack arranged on the first and second lower mirrors, and an upper dielectric mirror arranged on the spacer stack and covering the photodetector array.
    Type: Grant
    Filed: August 30, 2018
    Date of Patent: April 13, 2021
    Assignee: AMS AG
    Inventors: Hubert Enichlmair, Gerhard Eilmsteiner
  • Publication number: 20200271516
    Abstract: An optical sensing device comprises a photodetector array comprising at least one first photodetector and at least one second photodetector, the photodetector array being arranged on a semiconductor substrate. The optical sensing device further comprises a filter stack arranged on the substrate and covering the photodetector array. The filter stack comprises at least two first lower dielectric mirrors and at least two second lower dielectric mirrors, where a first and a second lower mirror are arranged above the first photodetector and a first and a second lower mirror are arranged above the second photodetector, and where the first lower mirrors have a different thickness in vertical direction which is perpendicular to the main plane of extension of the substrate than the second lower mirrors. The filter stack further comprises a spacer stack arranged on the first and second lower mirrors, and an upper dielectric mirror arranged on the spacer stack and covering the photodetector array.
    Type: Application
    Filed: August 30, 2018
    Publication date: August 27, 2020
    Inventors: Hubert Enichlmair, Gerhard Eilmsteiner
  • Publication number: 20190109254
    Abstract: A sensor device comprises a semiconductor substrate with a first type of electrical conductivity and with a photodiode structure for detecting incident UV radiation. The photodiode structure comprises a first well arranged within the semiconductor substrate and having a second type of electrical conductivity and a second well arranged at least partially within the first well and having the first type of electrical conductivity. A doping concentration of the first well is greater than a doping concentration of the second well within a surface region at a main surface of the semiconductor substrate. Thereby, a photon capturing layer having the second type of electrical conductivity is formed at the main surface. A p-n junction for detecting the incident UV radiation is formed by a boundary between the second well and the photon capturing layer.
    Type: Application
    Filed: April 7, 2017
    Publication date: April 11, 2019
    Inventors: Frederic Roger, Gerhard Eilmsteiner, Eugene G. Dierschke
  • Publication number: 20180372546
    Abstract: An optical sensing device comprises a substrate carrying a first and a second photodetector stack comprises a band-pass filter, a decoupling layer arranged on the band-pass filter and a lower dielectric mirror arranged on the decoupling layer. The filter stack comprises a spacer stack with a primary spacer layer arranged on the lower dielectric mirror, comprising a first dielectric material and covering the photodetector array. The spacer stack comprises a first spacer layer comprising the first dielectric material, wherein a first segment of the first spacer layer is arranged on the primary spacer layer and covers the second photodetector but not the first photodetector. The filter stack comprises an upper dielectric mirror arranged on the spacer stack.
    Type: Application
    Filed: November 29, 2016
    Publication date: December 27, 2018
    Inventors: Hubert ENICHLMAIR, Gerhard EILMSTEINER
  • Patent number: 9766546
    Abstract: The method comprises the steps of applying a layer of a negative photoresist on a bottom layer, providing the layer of the negative photoresist with a pattern arranged in a border zone of the resist structure to be produced, irradiating a surface area of the layer of the negative photoresist according to the resist structure to be produced, and removing the layer of the negative photoresist outside the irradiated surface area. The pattern is produced in such a manner that it comprises a dimension that is smaller than a minimal resolution of the irradiation. The pattern may especially be designed as a sub-resolution assist feature.
    Type: Grant
    Filed: July 25, 2014
    Date of Patent: September 19, 2017
    Assignee: AMS AG
    Inventors: Gerhard Eilmsteiner, Raimund Hoffmann
  • Publication number: 20160179009
    Abstract: The method comprises the steps of applying a layer of a negative photoresist on a bottom layer, providing the layer of the negative photoresist with a pattern arranged in a border zone of the resist structure to be produced, irradiating a surface area of the layer of the negative photoresist according to the resist structure to be produced, and removing the layer of the negative photoresist outside the irradiated surface area. The pattern is produced in such a manner that it comprises a dimension that is smaller than a minimal resolution of the irradiation. The pattern may especially be designed as a sub-resolution assist feature.
    Type: Application
    Filed: July 25, 2014
    Publication date: June 23, 2016
    Inventors: Gerhard EILMSTEINER, Raimund HOFFMANN
  • Patent number: 8282766
    Abstract: An etch apparatus, especially for silicon nitride etch includes a control unit coupled to at least one component of the group of components comprising heater current sensors, a pump transducer sensor and a flow sensor provided for a diluting liquid. A malfunction of the apparatus is avoided and the etching process can be controlled for better performance.
    Type: Grant
    Filed: November 19, 2008
    Date of Patent: October 9, 2012
    Assignee: Austriamicrosystems AG
    Inventors: Gerhard Eilmsteiner, Johann Ninaus
  • Publication number: 20100124824
    Abstract: An etch apparatus, especially for silicon nitride etch includes a control unit coupled to at least one component of the group of components comprising heater current sensors, a pump transducer sensor and a flow sensor provided for a diluting liquid. A malfunction of the apparatus is avoided and the etching process can be controlled for better performance.
    Type: Application
    Filed: November 19, 2008
    Publication date: May 20, 2010
    Applicant: austriamicrosystems AG
    Inventors: Gerhard EILMSTEINER, Johann NINAUS