Patents by Inventor Gerhard Fiehne

Gerhard Fiehne has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Production of high alignment marks and such alignment marks on a semiconductor wafer
    Patent number: 8722506
    Abstract: The invention relates to production of alignment marks on a semiconductor wafer with the use of a light-opaque layer (17), wherein, before the light-opaque layer (17) is applied, by means of the etching of cavities, free-standing pillar groups are produced in the cavities and then the light-opaque layer (17) is applied. The pillars are produced with a height of above 1 ?m, which, moreover, is greater than a thickness of the light-opaque layer (17) to be applied in the cavities as layer portions (17x; 17y). The cavities are formed with a width such that they are filled only partly with the layer portions (17x; 17y) when the light-opaque layer (17) is applied. The high, freely positioned alignment marks produced by the method as pillar series (16x; 16y), having a plurality of individual pillars (16a; 16a?) in a cavity (12a, 12y), of a scribing trench on the semiconductor wafer are likewise described.
    Type: Grant
    Filed: December 23, 2009
    Date of Patent: May 13, 2014
    Assignee: X-Fab Semiconductor Foundries AG
    Inventors: Steffen Reymann, Gerhard Fiehne, Uwe Eckoldt
  • PRODUCTION OF HIGH ALIGNMENT MARKS AND SUCH ALIGNMENT MARKS ON A SEMICONDUCTOR WAFER
    Publication number: 20120032356
    Abstract: The invention relates to production of alignment marks on a semiconductor wafer with the use of a light-opaque layer (17), wherein, before the light-opaque layer (17) is applied, by means of the etching of cavities, free-standing pillar groups are produced in the cavities and then the light-opaque layer (17) is applied. The pillars are produced with a height of above 1 ?m, which, moreover, is greater than a thickness of the light-opaque layer (17) to be applied in the cavities as layer portions (17x; 17y). The cavities are formed with a width such that they are filled only partly with the layer portions (17x; 17y) when the light-opaque layer (17) is applied. The high, freely positioned alignment marks produced by the method as pillar series (16x; 16y), having a plurality of individual pillars (16a; 16a?) in a cavity (12a, 12y), of a scribing trench on the semiconductor wafer are likewise described.
    Type: Application
    Filed: December 23, 2009
    Publication date: February 9, 2012
    Applicant: X-FAB SEMICONDUCTOR FOUNDRIES AG
    Inventors: Steffen Reymann, Gerhard Fiehne, Uwe Eckoldt