Abstract: A switchable element. The element includes a source electrode, a drain electrode, a conducting channel between the source electrode and the drain electrode, and a gate with multiferroic material being switchable, by application of an electrical signal to the gate, between a first switching state with a first spontaneous polarization direction and a second switching state with a second spontaneous polarization direction. The conducting channel is magnetoresistive, and a magnetic field strength at the conducting channel in the first switching state is different than a magnetic field strength in the second switching state, whereby a current-voltage characteristic of the conducting channel is dependent on the switching state of the multiferroic material.