Abstract: The invention relates to a device and a method for depositing semiconductor layers, in particular made of a plurality of components on one or more substrates (21) contacting a susceptor (2), wherein process gases can be introduced into the process chamber (1) through flow channels (15, 16; 18) of a gas inlet organ (8), together with a carrier gas, said carrier gas permeating the process chamber (1) substantially parallel to the susceptor and exits through a gas outlet organ (7), wherein the products of decomposition build up the process gases as a coating at least in regions on the substrate surface and on the surface of the gas outlet organ (7) disposed downstream of the susceptor (2) at a distance (D) from the downstream edge (21) thereof.

Abstract: The invention relates to a method for equipping a process chamber in an apparatus for depositing at least one layer on a substrate held by a susceptor in the process chamber, process gases being introduced into the process chamber through a gas inlet element, in particular by means of a carrier gas, the process gases decomposing into decomposition products in the chamber, in particular on hot surfaces, the decomposition products comprising the components that form the layer. In order to improve the apparatus so that thick multi-layer structures can be deposited reproducibly in process steps that follow one another directly, it is proposed that a material is selected for the surface facing the process chamber at least of the wall of the process chamber that is opposite the susceptor, the optical reflectivity, optical absorptivity and optical transmissivity of which respectively correspond to those of the layer to be deposited during the layer growth.

Abstract: A device for treating a substrate (12) includes a conveying device (13) for loading and unloading substrates or masks (10, 10?, 10?, 10??) into and from a process chamber (1) through loading openings (6, 7). A shielding plate (11), used to shield the substrate (12) or the mask (10) from the influence of heat is moved between a shielding position and a storage position during the substrate treatment and, after the substrate (12) is treated, from the storage position back into the shielding position. In the storage position, the shielding plate (11) is situated inside a storage chamber (2, 3).

Abstract: A gas distributor for a CVD or OVPD reactor comprises two or more gas volumes (1, 2) into each of which opens a feed pipe (3, 4) for a process gas, each gas volume (1, 2) being connected to a plurality of corresponding process gas outlets (6, 7) which open into the bottom (5) of the gas distributor. In order to increase the homogeneity of the gas composition, the two gas volumes (1, 2) comprise pre-chambers (10, 10?, 11) located in a first common plane (8) and a plurality of gas distribution chambers (12, 13) each associated with a gas volume are provided in a second plane (9?) adjacent to the bottom of the gas distributor. The pre-chambers (10, 10?, 11) and gas distribution chambers (12, 13) associated with each gas volume (1, 2) are connected with connection channels (14, 15).

Abstract: The invention relates to a gas inlet element (2) for a CVD reactor with a chamber (4), which has a multitude of bottom-side outlet openings (23), via which a process gas introduced into the chamber (4) via edge-side access openings (10) exits into a process chamber (21) of the CVD reactor (1). In order to homogenize the gas composition, the invention provides that at least one mixing chamber arrangement (11, 12, 13) is situated upstream from the access openings (10), and at least two process gases are mixed with one another inside this mixing chamber arrangement.

Abstract: The invention relates to a CVD reactor having a process chamber (1), the floor (3) of which is formed by a susceptor (2) for receiving substrates (4) to be coated with a layer and the ceiling (6) of which is formed by the underside of a gas inlet element (5) that has a multiplicity of gas inlet openings (13, 14) distributed uniformly over its entire surface, the gas inlet openings (13, 14) being divided into strip-like first and second gas inlet zones (11, 12) that run parallel to one another in a direction of extent, the gas inlet openings (13) of a first gas inlet zone (11) being connected to a common first process-gas feed line (9) for introducing a first process gas into the process chamber (1), the gas inlet openings (14) of a second gas inlet zone (12) being connected to a common first process-gas feed line (10), which is different from the first process-gas feed line (9), for introducing a second process gas into the process chamber (1), and the first and second gas inlet zones (11, 12) lying alternati

Abstract: The invention relates to a CVD reactor comprising a heatable body (2, 3) disposed in a reactor housing, a heating device (4, 17) for heating the body (2, 3) located at a distance from the body (2, 3), and a cooling device (5, 18) located at a distance from the body (2, 3). The heatable body, the heating device, and the cooling device are arranged such that heat is transferred from the heating device (4, 17) across the space between the heating device (4, 17) and the body (2, 3) to the body (2, 3), and from the body (2, 3) across the space between the body (2, 3) and the cooling device (5, 18) to the cooling device (5, 18). In order to be able to affect the surface temperature of the heated process chamber walls in a locally reproducible manner, control bodies (6, 19) can be inserted into the space between the cooling and/or heating device (4, 5, 17, 18). During the thermal treatment or between sequential treatment steps, said bodies are displaced such that the heat transport is locally affected.

Abstract: The invention relates to a device and a method for depositing semiconductor layers, in particular made of a plurality of components on one or more substrates (21) contacting a susceptor (2), wherein process gases can be introduced into the process chamber (1) through flow channels (15, 16; 18) of a gas inlet organ (8), together with a carrier gas, said carrier gas permeating the process chamber (1) substantially parallel to the susceptor and exits through a gas outlet organ (7), wherein the products of decomposition build up the process gases as a coating at least in regions on the substrate surface and on the surface of the gas outlet organ (7) disposed downstream of the susceptor (2) at a distance (D) from the downstream edge (21) thereof.

Abstract: The invention relates to a method for equipping a process chamber in an apparatus for depositing at least one layer on a substrate held by a susceptor in the process chamber, process gases being introduced into the process chamber through a gas inlet element, in particular by means of a carrier gas, the process gases decomposing into decomposition products in the chamber, in particular on hot surfaces, the decomposition products comprising the components that form the layer. In order to improve the apparatus so that thick multi-layer structures can be deposited reproducibly in process steps that follow one another directly, it is proposed that a material is selected for the surface facing the process chamber at least of the wall of the process chamber that is opposite the susceptor, the optical reflectivity, optical absorptivity and optical transmissivity of which respectively correspond to those of the layer to be deposited during the layer growth.

Abstract: The invention relates to a method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate, which is situated inside a process chamber of a reactor while being supported by a substrate holder. The layer is comprised of at least two material components provided in a fixed stoichiometric ratio, which are each introduced into the reactor in the form of a first and a second reaction gas, and a portion of the decomposition products form the layer, whereby the supply of the first reaction gas, which has a low thermal activation energy, determines the growth rate of the layer, and the second reaction gas, which has a high thermal activation energy, is supplied in excess and is preconditioned, in particular, by an independent supply of energy. The first reaction gas flows in a direction toward the substrate holder through a multitude of openings, which are distributed over a surface of a gas inlet element, said surface being located opposite the substrate holder.

Abstract: A method and device for depositing at least one layer, particularly a semiconductor layer, onto at least one substrate, which is situated inside a process chamber of a reactor while being supported by a substrate holder, is provided. The layer includes of at least two material components provided in a fixed stoichiometric ratio, which are each introduced into the reactor in the form of a first and a second reaction gas, and a portion of the decomposition products form the layer, whereby the supply of the first reaction gas, which has a low thermal activation energy, determines the growth rate of the layer, and the second reaction gas, which has a high thermal activation energy, is supplied in excess and is preconditioned, in particular, by an independent supply of energy.

Abstract: The invention relates to a device for depositing especially crystalline layers on at least one especially crystalline substrate in a process chamber comprising a top and a vertically opposing heated bottom for receiving the substrates. A gas-admittance body forming vertically superimposed gas-admittance regions is used to separately introduce at least one first and one second gaseous starting material, said starting materials flowing through the process chamber with a carrier gas in the horizontal direction. The gas flow homogenises in an admittance region directly adjacent to the gas-admittance body, and the starting materials are at least partially decomposed, forming decomposition products which are deposited on the substrates in a growth region adjacent to the admittance region, under continuous depletion of the gas flow. An additional gas-admittance region of the gas-admittance body is essential for one of the two starting materials, in order to reduce the horizontal extension of the admittance region.

Abstract: The invention relates to a device for the tempered storage of a container (19) for receiving condensed materials that are transported out of the container (19) by evaporation by means of a carrier gas guided through the container. Said device comprises a housing (3) forming a chamber (25), the wall (3) of said housing being embodied in a heat-insulating manner, a passage (20, 21) in the housing wall (3) for a gas supply line or gas evacuation line (17, 18) to, or from, the container (19) arranged in the chamber (25), and a heating (16) or cooling system for tempering the chamber (25). The invention is characterised in that a gas flow producer (4) and the gas flow guiding means (5-10) guiding the gas flow produced by the gas flow producer (4) are provided in the chamber (25), the gas flow produced by the gas flow producer and formed by the gas flow guiding means (5-10) being heated by the heating system (16) and flowing alongside the container (19).

Abstract: An apparatus for depositing thin layers on a substrate in a process chamber arranged in a reactor housing, the bottom of the process chamber consisting of a temperable substrate holder which can be rotatably driven about its vertical axis, and the cover of the chamber consisting of a gas inlet element. The cover extends parallel to the bottom and forms, together with its gas outlets arranged in a sieve-type manner, a gas exit surface which extends over the entire substrate bearing surface of the substrate holder, the process gas being introduced into the process chamber through the gas exit surface. The height of the process chamber is variable before the beginning of the deposition process and/or during the deposition process, which height is defined by the distance between the substrate bearing surface and the gas exit surface.

Abstract: The invention relates to a device for the vaporisation of condensed (solid or liquid) materials, in particular, of starting materials for OLED production, comprising a container (1), for housing the material with a gas supply line (2) and a gas exhaust line (3). A number of inserts (4) for housing the material are arranged in the container (1) which have an individual flow thereover, whereby the inserts (4) are arranged one over the other in the vertical direction and comprise recesses (5) for housing the material in the horizontal direction over which a flow is possible. Several gas flows may flow in parallel over several inserts.

Abstract: A process for depositing thin layers on a substrate in a process chamber arranged in a reactor housing, the bottom of the process chamber consisting of a temperable substrate holder which can be rotatably driven about its vertical axis, and the cover of the chamber consisting of a gas inlet element. The cover extends parallel to the bottom and forms, together with its gas outlets arranged in a sieve-type manner, a gas exit surface which extends over the entire substrate bearing surface of the substrate holder, the process gas being introduced into the process chamber through the gas exit surface. The process includes the step of varying the height of the process chamber, which is defined by the distance between the substrate bearing surface and the gas exit surface, before the beginning of the deposition process and/or during the deposition process.

Abstract: The invention relates to a gas inlet element (2) for a CVD reactor with a chamber (4), which has a multitude of bottom-side outlet openings (23), via which a process gas introduced into the chamber (4) via edge-side access openings (10) exits into a process chamber (21) of the CVD reactor (1). In order to homogenize the gas composition, the invention provides that at least one mixing chamber arrangement (11, 12, 13) is situated upstream from the access openings (10), and at least two process gases are mixed with one another inside this mixing chamber arrangement.

Abstract: A gas distributor for a CVD or OVPD reactor comprises two or more gas volumes (1,2) into each of which opens a feed pipe (3,4) for a process gas, each gas volume (1,2) being connected to a plurality of corresponding provess gas outlets (6,7) which open into the bottom (5) of the gas distributor. In order to increase the homogeneity if the gas composition, the two gas volumes (1,2) comprose pre-chambers (10, 10?, 11) located in a first common plane (8) and a plurality of gas distribution chambers (12, 13) each associated with a gas volume are provided in a second plane (9) adjacent to the bottom of the gas distributor. The pre-chambers (10, 10?, 11) and gas distribution chambers (12, 13) associated with each gas volume (1,2) are connected with connection channels (14, 15).

Abstract: The invention relates to a device for depositing especially crystalline layers on at least one especially crystalline substrate in a process chamber comprising a top and a vertically opposing heated bottom for receiving the substrates. A gas-admittance body forming vertically superimposed gas-admittance regions is used to separately introduce at least one first and one second gaseous starting material, said starting materials flowing through the process chamber with a carrier gas in the horizontal direction. The gas flow homogenises in an admittance region directly adjacent to the gas-admittance body, and the starting materials are at least partially decomposed, forming decomposition products which are deposited on the substrates in a growth region adjacent to the admittance region, under continuous depletion of the gas flow. An additional gas-admittance region of the gas-admittance body is essential for one of the two starting materials, in order to reduce the horizontal extension of the admittance region.

Abstract: A device for depositing crystalline layers onto one or more substrates in a process chamber, including: a reverse-heatable support plate which forms a wall of the process chamber and which is heated with a high frequency and is formed of inertly coated graphite; a gas inlet mechanism which is located in the center of the process chamber having a cover plate that is situated at a distance from the support plate; and a gas outlet ring formed of solid graphite which forms the outer limit of the process chamber and which has a plurality of radial gas outlets.