Patents by Inventor Gerhard Klimeck

Gerhard Klimeck has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10680088
    Abstract: A tunnel field effect transistor (TFET) device includes a substrate, heavily doped source and drain regions disposed at opposite ends of a channel region forming a PiN or NiP structure, the channel region including a first substantially parallelogram portion having a first length defined along a longitudinal axis extending from the source region to the drain region and a second substantially parallelogram portion having a second length defined along the longitudinal axis larger than the first length, the TFET device having an effective channel length that is an average of the first and second lengths. The channel region includes a channel material with a first effective mass along a longitudinal axis extending from the source region to the drain region and a second effective mass along a lateral axis perpendicular to the longitudinal axis, the first effective mass being greater than the second effective mass.
    Type: Grant
    Filed: November 27, 2018
    Date of Patent: June 9, 2020
    Assignee: Purdue Research Foundation
    Inventors: Hesameddin Ilatikhameneh, Tarek Ameen Beshari, Bozidar Novakovic, Gerhard Klimeck, Rajib Rahman
  • Publication number: 20200027974
    Abstract: A tunnel field effect transistor (TFET) device includes a substrate, heavily doped source and drain regions disposed at opposite ends of a channel region forming a PiN or NiP structure, the channel region including a first substantially parallelogram portion having a first length defined along a longitudinal axis extending from the source region to the drain region and a second substantially parallelogram portion having a second length defined along the longitudinal axis larger than the first length, the TFET device having an effective channel length that is an average of the first and second lengths. The channel region includes a channel material with a first effective mass along a longitudinal axis extending from the source region to the drain region and a second effective mass along a lateral axis perpendicular to the longitudinal axis, the first effective mass being greater than the second effective mass.
    Type: Application
    Filed: November 27, 2018
    Publication date: January 23, 2020
    Applicant: Purdue Research Foundation
    Inventors: Hesameddin Ilatikhameneh, Tarek Ameen Beshari, Bozidar Novakovic, Gerhard Klimeck, Rajib Rahman
  • Patent number: 10311179
    Abstract: A method for modeling a material at least partially-defined by atomic information includes, for each of a plurality of configurations of the material, determining energy moments for a density of states of the respective configuration of the material, and generating a tight binding Hamiltonian matrix for the respective configuration of the material. The method further includes, for each of the plurality of configurations of the material, forming a tight binding model of the configuration of the material by resolving a linking of (i) the energy moments for the density of states of the material to (ii) the tight binding Hamiltonian matrix for the material. Still further the method includes, based on the tight binding models for each of the configurations of the material, forming an environmentally-adapted tight binding model.
    Type: Grant
    Filed: August 28, 2018
    Date of Patent: June 4, 2019
    Assignee: Purdue Research Foundation
    Inventors: Gerhard Klimeck, Mykhailo Povolotskyi, Tillmann C Kubis, Ganesh Hegde
  • Publication number: 20180373826
    Abstract: A method for modeling a material at least partially-defined by atomic information includes, for each of a plurality of configurations of the material, determining energy moments for a density of states of the respective configuration of the material, and generating a tight binding Hamiltonian matrix for the respective configuration of the material. The method further includes, for each of the plurality of configurations of the material, forming a tight binding model of the configuration of the material by resolving a linking of (i) the energy moments for the density of states of the material to (ii) the tight binding Hamiltonian matrix for the material.
    Type: Application
    Filed: August 28, 2018
    Publication date: December 27, 2018
    Applicant: Purdue Research Foundation
    Inventors: Gerhard Klimeck, Mykhailo Povolotskyi, Tillmann C Kubis, Ganesh Hegde
  • Patent number: 10141436
    Abstract: A tunnel field effect transistor (TFET) includes a substrate, heavily doped source and drain regions disposed at opposite ends of a channel region forming a PiN or NiP structure, the channel region including a first substantially parallelogram portion having a first length defined along a longitudinal axis extending from the source region to the drain region and a second substantially parallelogram portion having a second length defined along the longitudinal axis larger than the first length, the TFET device having an effective channel length that is an average of the first and second lengths. The channel region includes a channel material with a first effective mass along a longitudinal axis extending from the source region to the drain region and a second effective mass along a lateral axis perpendicular to the longitudinal axis, the first effective mass being greater than the second effective mass.
    Type: Grant
    Filed: April 4, 2017
    Date of Patent: November 27, 2018
    Assignee: Purdue Research Foundation
    Inventors: Hesameddin Ilatikhameneh, Tarek Ameen Beshari, Bozidar Novakovic, Gerhard Klimeck, Rajib Rahman
  • Publication number: 20180336302
    Abstract: The disclosure develops a multi-scale model that partitions the device into different spatial regions where the high carrier domains are treated as reservoirs in local equilibrium and serve as injectors and receptors of carriers into the neighboring reservoirs through tunneling and thermionic emission. The nonequilibrium Green's function (NEGF) formalism is used to compute the dynamics (states) and the kinetics (filling of states) in the entire extended complex device. The local density of states in the whole device is computed quantum mechanically within a multi-band tight binding Hamiltonian. The model results agree with experimental I-V curves quantitatively.
    Type: Application
    Filed: May 22, 2018
    Publication date: November 22, 2018
    Inventors: Gerhard Klimeck, Tillmann Kubis, Junzhe Geng
  • Publication number: 20180254335
    Abstract: A tunnel field effect transistor (TFET) device is disclosed. The TFET includes a substrate, heavily doped source and drain regions disposed at opposite ends of the substrate separated by a channel region forming a PiN or NiP structure, the channel region including a first substantially parallelogram portion having a first length defined along a longitudinal axis extending from the source region to the drain region and a second substantially parallelogram portion having a second length defined along the longitudinal axis larger than the first length, the TFET device having an effective channel length defined along the longitudinal axis that is an average of the first and second lengths. The channel region includes a channel material with a first effective mass along a longitudinal axis extending from the source region to the drain region and a second effective mass along a lateral axis perpendicular to the longitudinal axis.
    Type: Application
    Filed: April 4, 2017
    Publication date: September 6, 2018
    Applicant: Purdue Research Foundation
    Inventors: Hesameddin Ilatikhameneh, Tarek Ameen Beshari, Bozidar Novakovic, Gerhard Klimeck, Rajib Rahman
  • Patent number: 10061877
    Abstract: A method for modeling a material at least partially-defined by atomic information includes, for each of a plurality of configurations of the material, determining energy moments for a density of states of the respective configuration of the material, and generating a tight binding Hamiltonian matrix for the respective configuration of the material. The method further includes, for each of the plurality of configurations of the material, forming a tight binding model of the configuration of the material by resolving a linking of (i) the energy moments for the density of states of the material to (ii) the tight binding Hamiltonian matrix for the material. Still further the method includes, based on the tight binding models for each of the configurations of the material, forming an environmentally-adapted tight binding model.
    Type: Grant
    Filed: December 31, 2017
    Date of Patent: August 28, 2018
    Assignee: PURDUE RESEARCH FOUNDATION
    Inventors: Gerhard Klimeck, Mykhailo Povolotskyi, Tillmann C Kubis, Ganesh Hegde
  • Publication number: 20180121583
    Abstract: A method for modeling a material at least partially-defined by atomic information includes, for each of a plurality of configurations of the material, determining energy moments for a density of states of the respective configuration of the material, and generating a tight binding Hamiltonian matrix for the respective configuration of the material. The method further includes, for each of the plurality of configurations of the material, forming a tight binding model of the configuration of the material by resolving a linking of (i) the energy moments for the density of states of the material to (ii) the tight binding Hamiltonian matrix for the material.
    Type: Application
    Filed: December 31, 2017
    Publication date: May 3, 2018
    Applicant: Purdue Research Foundation
    Inventors: Gerhard Klimeck, Mykhailo Povolotskyi, Tillmann C. Kubis, Ganesh Hegde
  • Patent number: 9858365
    Abstract: A method for modeling a material at least partially-defined by atomic information includes, for each of a plurality of configurations of the material, determining energy moments for a density of states of the respective configuration of the material, and generating a tight binding Hamiltonian matrix for the respective configuration of the material. The method further includes, for each of the plurality of configurations of the material, forming a tight binding model of the configuration of the material by resolving a linking of (i) the energy moments for the density of states of the material to (ii) the tight binding Hamiltonian matrix for the material. Still further the method includes, based on the tight binding models for each of the configurations of the material, forming an environmentally-adapted tight binding model.
    Type: Grant
    Filed: October 24, 2014
    Date of Patent: January 2, 2018
    Assignee: PURDUE RESEARCH FOUNDATION
    Inventors: Gerhard Klimeck, Mykhailo Povolotskyi, Tillmann Christoph Kubis, Ganesh Hegde
  • Publication number: 20150120259
    Abstract: A method for modeling a material at least partially-defined by atomic information includes, for each of a plurality of configurations of the material, determining energy moments for a density of states of the respective configuration of the material, and generating a tight binding Hamiltonian matrix for the respective configuration of the material. The method further includes, for each of the plurality of configurations of the material, forming a tight binding model of the configuration of the material by resolving a linking of (i) the energy moments for the density of states of the material to (ii) the tight binding Hamiltonian matrix for the material. Still further the method includes, based on the tight binding models for each of the configurations of the material, forming an environmentally-adapted tight binding model.
    Type: Application
    Filed: October 24, 2014
    Publication date: April 30, 2015
    Inventors: Gerhard Klimeck, Mykhailo Povolotskyi, Tillmann Christoph Kubis, Ganesh Hegde
  • Patent number: 8309989
    Abstract: Illustrative embodiments of a vertical tunneling field effect transistor are disclosed which may comprise a semiconductor body including a source region doped with a first dopant type and a pocket region doped with a second dopant type, where the pocket region is formed above the source region. The transistor may also comprise an insulated gate formed above the source and pocket regions, the insulated gate being configured to generate electron tunneling between the source and pocket regions if a voltage is applied to the insulated gate. The transistor may further comprise a lateral tunneling barrier formed to substantially prevent electron tunneling between the source region and a drain region of the semiconductor body, where the drain region is doped with the second dopant type.
    Type: Grant
    Filed: August 18, 2010
    Date of Patent: November 13, 2012
    Assignee: Purdue Research Foundation
    Inventors: Mathieu Luisier, Samarth Agarwal, Gerhard Klimeck
  • Publication number: 20120043607
    Abstract: Illustrative embodiments of a vertical tunneling field effect transistor are disclosed which may comprise a semiconductor body including a source region doped with a first dopant type and a pocket region doped with a second dopant type, where the pocket region is formed above the source region. The transistor may also comprise an insulated gate formed above the source and pocket regions, the insulated gate being configured to generate electron tunneling between the source and pocket regions if a voltage is applied to the insulated gate. The transistor may further comprise a lateral tunneling barrier formed to substantially prevent electron tunneling between the source region and a drain region of the semiconductor body, where the drain region is doped with the second dopant type.
    Type: Application
    Filed: August 18, 2010
    Publication date: February 23, 2012
    Inventors: Mathieu Luisier, Samarth Agarwal, Gerhard Klimeck
  • Patent number: 6667490
    Abstract: A negative differential resistance device is provided that includes a first barrier, a second barrier and a third barrier. A first quantum well is formed between the first and second barriers. A second quantum well is formed between the second and third barriers.
    Type: Grant
    Filed: October 23, 2002
    Date of Patent: December 23, 2003
    Assignee: Raytheon Company
    Inventors: Jan Paul Van der Wagt, Gerhard Klimeck
  • Publication number: 20030043660
    Abstract: A negative differential resistance device is provided that includes a first barrier, a second barrier and a third barrier. A first quantum well is formed between the first and second barriers. A second quantum well is formed between the second and third barriers.
    Type: Application
    Filed: October 23, 2002
    Publication date: March 6, 2003
    Applicant: Raytheon Company ,a Delaware corporation
    Inventors: Jan Paul van der Wagt, Gerhard Klimeck
  • Patent number: 6490193
    Abstract: A negative differential resistance device is provided that includes a first barrier, a second barrier and a third barrier. A first quantum well is formed between the first and second barriers. A second quantum well is formed between the second and third barriers.
    Type: Grant
    Filed: August 22, 2001
    Date of Patent: December 3, 2002
    Assignee: Raytheon Company
    Inventors: Jan Paul van der Wagt, Gerhard Klimeck