Abstract: The invention relates to CCD Si detector configuration with a semiconductor sensibilizator. The spectral range of the detectors extends from 0.4 .mu.m to 1.6 .mu.m. The CCD Si detector configuration is produced as integrated structure so that a large picture element number can be achieved. The semiconductor layer sequence of the semiconductor sensibilizator is grown using differential molecular beam epitaxial growth techniques.

Abstract: A monolithically integrated semiconductor circuit, provided for coupling arrangements having symmetrical cross points, comprising two through switching NPN transistors, and a composite circuit for switching through the switching transistors. The composite circuit includes a double collector PNP transistor, with one collector connected to the base of a first NPN transistor and the other collector connected to the base of a second NPN transistor. The emitter of the double collector transistor is connected to the collector of both NPN transistors and also, via a first resistor to a voltage source. The base of the double collector transistor is connected, via a component causing a constant drop in voltage, to the voltage source, and also via a second resistor, to a trigger stage. The emitters of the NPN transistor are connected, respectively, to the bases of the two through switching transistors.

Abstract: In a color decoder for a color television receiver, including a demodulator for demodulating a modulated chrominance subcarrier to obtain color signals, delay lines in the form of a charge storage and transfer circuit for delaying the color signals by one picture line scanning period, and adder stages forming a matrix connected to produce color difference signals from the delayed and the undelayed color signals, the demodulator and the adder stages are constituted by integrated charge storage and transfer circuits on a semiconductor chip.

Abstract: An acoustic surface-wave filter comprises an element which is excitable to perform surface oscillations, which is formed at least partly of piezoelectric material and has interference locations for the surface wave on its surface together with electromechanical converter means, at least some of the interference locations forming a resonator with the average spacing of the interference locations being equal to a half of the wavelength of the surface waves or a whole number multiple of a half of the wavelength of the surface waves.

Abstract: To reduce the capacitive coupling between the input and output transducers of a piezoelectric resonator arrangement having a one-piece construction, one or a plurality of coatings disposed between the two transducers, which coatings serve for defining given resonators, are connected to ground on either one or both sides and, if required, one coating of the input and output transducers is also connected to ground.