Abstract: A wafer in accordance with various embodiments may include: at least one metallization structure including at least one opening; and at least one separation line region along which the wafer is to be diced, wherein the at least one separation line region intersects the at least one opening.

Abstract: A wafer in accordance with various embodiments may include: at least one metallization structure including at least one opening; and at least one separation line region along which the wafer is to be diced, wherein the at least one separation line region intersects the at least one opening.

Abstract: A wafer in accordance with various embodiments may include: at least one metallization structure including at least one opening; and at least one separation line region along which the wafer is to be diced, wherein the at least one separation line region intersects the at least one opening.

Abstract: A method includes providing a semiconductor wafer including multiple semiconductor chips, forming a first scribe line on a frontside of the semiconductor wafer, wherein the first scribe line has a first width and separates semiconductor chips of the semiconductor wafer, forming a second scribe line on the frontside of the semiconductor wafer, wherein the second scribe line has a second width and separates semiconductor chips of the semiconductor wafer, wherein the first scribe line and the second scribe line intersect in a crossing area which is greater than a product of the first width and the second width, and plasma etching the semiconductor wafer in the crossing area.

Abstract: A chip includes a dielectric layer and a fill structure in the dielectric layer, wherein the fill structure extends along a dicing edge of the chip, with the fill structure abutting the dicing edge.

Abstract: A method includes providing a semiconductor wafer including multiple semiconductor chips, forming a first scribe line on a frontside of the semiconductor wafer, wherein the first scribe line has a first width and separates semiconductor chips of the semiconductor wafer, forming a second scribe line on the frontside of the semiconductor wafer, wherein the second scribe line has a second width and separates semiconductor chips of the semiconductor wafer, wherein the first scribe line and the second scribe line intersect in a crossing area which is greater than a product of the first width and the second width, and plasma etching the semiconductor wafer in the crossing area.

Abstract: A method for fusing a laser fuse in accordance with various embodiments may include: providing a semiconductor workpiece having a substrate region and at least one laser fuse; fusing the at least one laser fuse from a back side of the substrate region by means of an infrared laser beam.

Abstract: A chip includes a dielectric layer and a fill structure in the dielectric layer, wherein the fill structure extends along a dicing edge of the chip, with the fill structure abutting the dicing edge.

Abstract: A chip includes a dielectric layer and a fill structure in the dielectric layer, wherein the fill structure extends along a dicing edge of the chip, with the fill structure abutting the dicing edge.

Abstract: A wafer in accordance with various embodiments may include: at least one metallization structure including at least one opening; and at least one separation line region along which the wafer is to be diced, wherein the at least one separation line region intersects the at least one opening.

Abstract: A method for fusing a laser fuse in accordance with various embodiments may include: providing a semiconductor workpiece having a substrate region and at least one laser fuse; fusing the at least one laser fuse from a back side of the substrate region by means of an infrared laser beam.

Abstract: A chip includes a dielectric layer and a fill structure in the dielectric layer, wherein the fill structure extends along a dicing edge of the chip, with the fill structure abutting the dicing edge.