Patents by Inventor Gerhard Pensl

Gerhard Pensl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor component with foreign atoms introduced by ion implantation and process for producing the same
    Patent number: 6429459
    Abstract: A semiconductor component having impurity atoms introduced by implantation which are subsequently electrically activated by way of an annealing process. Immediately after the annealing process, the component has a mean surface roughness of less than 15 nm and at least 10% of the implanted impurity atoms are electrically activated.
    Type: Grant
    Filed: April 17, 1998
    Date of Patent: August 6, 2002
    Assignee: DaimlerChrysler AG
    Inventors: Wolfgang Wondrak, Vera Lauer, Nando Kaminski, Raban Held, Gerhard Pensl, Scott T. Sheppard