Abstract: An ion exchange resin comprises a crosslinked resin and a salt covalently bonded to a carbon of the resin, wherein the salt comprises a first non-metallic cation and a first counteranion, wherein the first counteranion comprises a second non-metallic cation and a thiosulfate counteranion, and wherein the ion exchange resin is essentially free of metals. The ion exchange resin finds particular use in the removal of impurities from solutions that are useful in the manufacture of semiconductor devices.

Abstract: New photoresist compositions are provided that comprise a component that comprises an amide group and multiple hydroxyl groups. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and an amide component with multiple hydroxyl groups that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer.

Abstract: New photoresist compositions are provided that comprise a component that comprises a radiation-insensitive ionic compound. Preferred photoresists of the invention may comprise a resin with photoacid-labile groups; a photoacid generator compound; and a radiation-insensitive ionic compound that can function to decrease undesired photogenerated-acid diffusion out of unexposed regions of a photoresist coating layer.

Abstract: Provided are containers comprising: an enclosure member; and optionally an article at least partially within the enclosure member. The enclosure member and/or the article comprise an activated polymeric surface, wherein the enclosure member and/or the article comprise an activated polymeric surface, wherein the activated polymeric surface is formed by a method comprising treatment of a sulfonated polymeric surface with a composition comprising a protic acid. Also provided are methods of forming containers. The containers and their methods of formation find particular use in the storage of high purity chemicals useful in the electronics industry, and in the water, pharmaceutical and food and beverage industries.

Abstract: Provided are topcoat compositions that include: a matrix polymer; a surface active polymer; an ionic thermal acid generator comprising an anion and a cation, wherein the anion, the cation, or the anion and the cation are fluorinated; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.

Abstract: Provided are topcoat compositions that include: a matrix polymer; a surface active polymer; an ionic thermal acid generator comprising an anion and a cation, wherein the anion, the cation, or the anion and the cation are fluorinated; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.

Abstract: Provided are purification methods, comprising: (a) providing an organic solvent and a phenolic peroxide formation inhibitor, wherein the organic solvent has a first boiling point at standard atmospheric pressure (bp1) and the phenolic peroxide formation inhibitor has a second boiling point at standard atmospheric pressure (bp2) that satisfy the following inequality (I): bp2?(1.10)(bp1)??(I); and (b) heating the organic solvent and the phenolic peroxide formation inhibitor to a temperature causing the organic solvent and phenolic peroxide formation inhibitor to vaporize, and (ii) condensing the vaporized organic solvent and peroxide formation inhibitor to provide a purified mixture of the organic solvent and peroxide formation inhibitor. The methods find particular use in the purification of solvents that are useful in process chemicals for the manufacture of semiconductor devices.

Abstract: Provided are purification methods, comprising: (a) providing an organic solvent and a phenolic peroxide formation inhibitor, wherein the organic solvent has a first boiling point at standard atmospheric pressure (bp1) and the phenolic peroxide formation inhibitor has a second boiling point at standard atmospheric pressure (bp2) that satisfy the following inequality (I): bp2?(1.10)(bp1) ??(I); and (b) heating the organic solvent and the phenolic peroxide formation inhibitor to a temperature causing the organic solvent and phenolic peroxide formation inhibitor to vaporize, and (ii) condensing the vaporized organic solvent and peroxide formation inhibitor to provide a purified mixture of the organic solvent and peroxide formation inhibitor. The methods find particular use in the purification of solvents that are useful in process chemicals for the manufacture of semiconductor devices.

Abstract: New photoresist are provided that comprises a low-Tg component and that are particularly useful for ion implant lithography applications. Preferred photoresists of the invention can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride and other inorganic surfaces.

Abstract: An ion exchange resin comprises a crosslinked resin and a salt covalently bonded to a carbon of the resin, wherein the salt comprises a first non-metallic cation and a first counteranion, wherein the first counteranion comprises a second non-metallic cation and a thiosulfate counteranion, and wherein the ion exchange resin is essentially free of metals. The ion exchange resin finds particular use in the removal of impurities from solutions that are useful in the manufacture of semiconductor devices.

Abstract: Provided are ionic thermal acid generators of the following general formula (I): wherein: Ar1 represents an optionally substituted carbocyclic or heterocyclic aromatic group; W independently represents a group chosen from carboxyl, hydroxy, nitro, cyano, C1-5 alkoxy and formyl; X is a cation; Y independently represents a linking group; Z independently represents a group chosen from hydroxyl, fluorinated alcohols, esters, optionally substituted alkyl, C5 or higher optionally substituted monocyclic, polycyclic, fused polycyclic cycloaliphatic, or aryl, which may optionally comprise a heteroatom, provided at least one occurrence of Z is a hydroxyl group; a is an integer of 0 or greater; b is an integer of 1 or greater; provided that a+b is at least 1 and not greater than the total number of available aromatic carbon atoms of the aromatic group. Also provided are photoresist pattern trimming compositions and methods of trimming a photoresist pattern using the trimming compositions.

Abstract: Provided are topcoat compositions that include: a matrix polymer; a surface active polymer; an ionic thermal acid generator comprising an anion and a cation, wherein the anion, the cation, or the anion and the cation are fluorinated; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.

Abstract: Provided are methods of trimming a photoresist pattern. The methods comprise: (a) providing a semiconductor substrate; (b) forming a photoresist pattern on the substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising: a matrix polymer comprising an acid labile group; a photoacid generator; and a solvent; (c) coating a photoresist trimming composition on the substrate over the photoresist pattern, wherein the trimming composition comprises: a matrix polymer, an aromatic acid that is free of fluorine; and a solvent; (d) heating the coated substrate, thereby causing a change in polarity of the photoresist matrix polymer in a surface region of the photoresist pattern; and (e) contacting the photoresist pattern with a rinsing agent to remove the surface region of the photoresist pattern, thereby forming a trimmed photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices.

Abstract: Provided are ionic thermal acid generators comprising an anion of an aromatic sulfonic acid comprising one or more fluorinated alcohol group and a cation. Also provided are photoresist pattern trimming compositions that include an ionic thermal acid generator, a matrix polymer and a solvent, and methods of trimming a photoresist pattern using the trimming compositions. The thermal acid generators, compositions and methods find particular applicability in the manufacture of semiconductor devices.

Abstract: Provided are topcoat compositions that include: a matrix polymer; a surface active polymer; an ionic thermal acid generator comprising an anion and a cation, wherein the anion, the cation, or the anion and the cation are fluorinated; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.

Abstract: New photoresist are provided that comprises an Si-containing component and that are particularly useful for ion implant lithography applications. Photoresists of the invention can exhibit good adhesion to underlying inorganic surfaces such as SiON, silicon oxide, silicon nitride and other inorganic surfaces.

Abstract: Provided are ionic thermal acid generators of the following general formula (I): wherein: Ar1 represents an optionally substituted carbocyclic or heterocyclic aromatic group; W independently represents a group chosen from carboxyl, hydroxy, nitro, cyano, C1-5 alkoxy and formyl; X is a cation; Y independently represents a linking group; Z independently represents a group chosen from hydroxyl, fluorinated alcohols, esters, optionally substituted alkyl, C5 or higher optionally substituted monocyclic, polycyclic, fused polycyclic cycloaliphatic, or aryl, which may optionally comprise a heteroatom, provided at least one occurrence of Z is a hydroxyl group; a is an integer of 0 or greater; b is an integer of 1 or greater; provided that a+b is at least 1 and not greater than the total number of available aromatic carbon atoms of the aromatic group. Also provided are photoresist pattern trimming compositions and methods of trimming a photoresist pattern using the trimming compositions.

Abstract: Provided are ionic thermal acid generators comprising an anion of an aromatic sulfonic acid comprising one or more fluorinated alcohol group and a cation. Also provided are photoresist pattern trimming compositions that include an ionic thermal acid generator, a matrix polymer and a solvent, and methods of trimming a photoresist pattern using the trimming compositions. The thermal acid generators, compositions and methods find particular applicability in the manufacture of semiconductor devices.

Abstract: New ionic thermal acid generator compounds are provided. Also provided are photoresist compositions, antireflective coating compositions, and chemical trim overcoat compositions, and methods of using the compositions.

Abstract: New photoresists are provided that comprise preferably as distinct components: a resin, a photoactive component and a phenolic component Preferred photoresists of the invention are can be useful for ion implant lithography protocols.