Abstract: Silicon semiconductor component with a wafer-like silicon semiconductor body with an edge contour made by an etching technique. The component has a p-region parallel to a principal surface of the semiconductor body and has in this principal surface a passivating ditch, into which leads a pn-junction extending between the more heavily doped p-region and a less heavily doped n-region, in which the edge contour has in the vicinity of a flank length, between the emergence of the pn-junction into the passivating ditch and this principal surface of the semiconductor body, a small angle of inclination of 1.degree. to 7.degree.. The angle of inclination (.alpha.) of the edge contour is nearly uniform over the major part of the flank length (L) and the following relationships apply:L=(0.8 . . . 1.6).multidot.x.sub.n andH=(0.5 . . . 1.2).multidot.x.sub.p, whereH=the height of the p-doped silicon layer over the pn-junction, measured in the center of the flank length (L),x.sub.

Abstract: A bleach-fix sheet for use in color photographic processes comprises a support having thereon a bleach-fix layer and a water reservoir layer comprising a water-supplying polymer. In a preferred embodiment, the bleach-fix sheet is useful to bleach and fix a retained image in a color image diffusion transfer process.

Abstract: A bleach-fix sheet for use in color photographic processes comprises a support having thereon a bleaching agent, a fixing agent and a hardened hydrophilic binder. In a preferred embodiment, the bleach-fix sheet is useful to bleach and fix a retained image in a color image diffusion transfer unit.

Abstract: A chemically sensitive field effect transistor (FET), particularly an ion-sensitive FET (ISFET), and a method of making the same, wherein a semi-conductor body of a first conductivity type is provided with source and drain diffusion zones spaced apart and extending a predetermined distance into the semiconductor body from the front face thereof. Also formed in the semiconductor body is a pair of connection zones extending from the front face to the rear face of the semiconductor body, and connected to the diffusion zones on the front face by means of conductor paths, the diffusion zones, the conduction paths, and the connection zones formed of a material having a second conductivity and which are of a second conduction type with opposite polarity to the conduction type of the semiconductor body. External connections are made to the diffusion zones through the conductor paths and the connection zones by means of connection lines contacting the connection zones at the rear face of the semiconductor body.

Abstract: A method for controlling a gallium diffusion with at least one silicon wafer, wherein precisely dosed amounts of hydrogen, oxygen, and optionally nitrogen are mixed in a combustion chamber where the hydrogen and oxygen is converted into water vapor and hydrogen. The combustion chamber is connected to a source portion of the diffusion oven, wherein is contained a gallium oxide containing crucible. The water vapor, hydrogen (and nitrogen) mixture is then passed from the combustion chamber to the source over where the volatile sub-oxide (Ga.sub.2 O), is produced and then carried in a gas stream to the silicon wafer contained in a main portion of the diffusion oven for diffusion therein.