Abstract: In the case of a photocell based on gallium arsenide or indium phosphide, a layer of amorphous, hydrogenous carbon (a-C:H) having a thickness of .ltoreq.0.1 .mu.m and a specific electrical resistance of .gtoreq.10.sup.6 .OMEGA..cm is placed on a layer of p-doped gallium arsenide (GaAs) or indium phosphide (InP).

Abstract: The invention provides a method for making a new semiconductor base material comprising thin layers of amorphous, hydrogenous carbon (a-c:H) with a specific electrical resistance of between 10.sup.1 and 10.sup.8 .OMEGA..cm and a charge carrier concentration (n+p) of between 10.sup.10 and 10.sup.18 cm.sup.-3, respectively at room temperature. The new semiconductor base material can be manufactured in thin layer technology with the application of band processes and exhibits a charge carrier mobility of at least 1 cm.sup.2.v.sup.-1.s.sup.-1.

Abstract: A capacitive moisture sensor with a dielectric consisting of a moisture sensitive polymer which is mounted between two electrodes fulfills all the requirements of capacitive moisture sensors to a high degree, in particular with regard to a high long-term stability, when the organic polymer is a polybenzoxazole or a polybenzothiazole.

Abstract: Layers consisting of vinylidene fluoride polymers or vinylidene fluoride/trifluoroethylene copolymers can be prepared with a thickness of <10 .mu.m, whereby the dielectric constant or the ferroelectric properties simultaneously correspond to those of known materials. Vinylidene fluoride or a mixture of vinylidene fluoride and trifluoroethylene in a concentration of .ltoreq.5.times.10.sup.-9 mol/cm.sup.3 is subjected to a low pressure plasma polymerization which is excited by microwaves, and the polymer or copolymer is deposited onto a substrate at an electric field strength of <850 V/cm.

Abstract: Glow polymerisate layers can be generated on a substrate, starting from hydrocarbons and/or fluorocarbons, by means of a high-frequency, low-pressure glow discharge. Glow polymerisates completely saturated with hydrogen or fluorine are obtained when the glow discharge is carried out in the microwave range between 0.5 and 1.000 GHz and if the amplitude E.sub.0 of the effective field strength in the vicinity of the substrate no greater than 850 V/cm.

Abstract: An improved thermal generator is described which includes a plurality of film thermocouples which are vapor-deposited on an insulating carrier material. The improvement resides in the fact that at least two rows of the thermocouples, arranged on the carrier with consecutive thermocouples alternating in polarity and serially connected to each other, are bridged together by a connecting layer which is vapor-deposited between two thermocouples in each row.