Patents by Inventor Gerhard Schmid

Gerhard Schmid has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5204254
    Abstract: A maltopentaose producing amylase, and its derivatives modified by gene manipulation, can be expressed in E. col. These amylases facilitate the production of maltopentaose.
    Type: Grant
    Filed: May 29, 1991
    Date of Patent: April 20, 1993
    Assignee: Consortium fur elektrochemische Industrie GmbH
    Inventors: Gerhard Schmid, Anton Candussio, August Bock
  • Patent number: 4969415
    Abstract: The apparatus comprises a plasma deposition chamber having a port through which a fluoro compound etch gas is introduced into the chamber and a port through which the chamber is evacuated, refractory metal cathode configuration within the chamber, an anode within the chamber, and energy impression means for ionizing the etch gas in the chamber, whereby the etch gas reacts with the refractory metal cathode configuration to convert the metal to gaseous refractory metal fluorides which decompose to form a deposited layer on a semiconductor substrate positioned on the anode.
    Type: Grant
    Filed: December 28, 1989
    Date of Patent: November 13, 1990
    Assignee: International Business Machines Corporation
    Inventors: Johann W. Bartha, Thomas Bayer, Johann Greschner, Georg Kraus, Gerhard Schmid
  • Patent number: 4918033
    Abstract: The invention comprises a PECVD method for the deposition of refractory metal layers or layers containing refractory metal by the in situ formation of refractory metal fluorides. For this purpose, an etch gas, such as CF.sub.4, NF.sub.3, SF.sub.6 etc., is introduced into a plasma deposition chamber which comprises a cathode, with a refractory metal sheet electrically connected thereto, and an anode carrying wafers.In a preferred example, CF.sub.6 is introduced into the chamber and, via a gas shower, into a cathode region. After ignition of a plasma, the ionized etch gas acts on a tungsten sheet, generating WF.sub.x ions that diffuse towards a target with wafers. The WF.sub.x ions thus produced are suitable for the deposition of a tungsten layer or a layer containing tungsten on silicon wafers.
    Type: Grant
    Filed: September 1, 1988
    Date of Patent: April 17, 1990
    Assignee: International Business Machines Corporation
    Inventors: Johann W. Bartha, Thomas Bayer, Johann Greschner, Georg Kraus, Gerhard Schmid
  • Patent number: 4822874
    Abstract: A process for preparing cyclooctaamylose by enzymatic cleavage of an aqueous preparation of starch in the presence of a complexing agent is disclosed. As a selective complexing agent for cyclooctaamylose, a compound of the formula I is employed. ##STR1## in which A, B, D and E, independently of one another, represent ##STR2## (R=hydrogen, alkyl, hydroxyl, alkoxy or carboxyl radical), and m, n, o and p are within the limits 0 to 20, with the proviso that the number of atoms forming the ring is within the limits from 13 to 24. The compounds prepared by the process of the invention are useful in the medicaments sector, in crop protection and cosmetics, or in the foodstuffs industry.
    Type: Grant
    Filed: April 19, 1988
    Date of Patent: April 18, 1989
    Assignee: Consortium fur Elektrochemische Industrie, GmbH
    Inventors: Gerhard Schmid, Hans-Jurgen Eberle
  • Patent number: 4624048
    Abstract: For making rails in workpieces for magnetic head sliders for sensors of magnetizable media, anodic oxidation of highly pure aluminum substrates is applied. For that purpose, the respective surface of the substrates is covered with a mask cover which leaves uncovered the zones in the substrate surface area which are intended for the forming of rails. By means of anodic oxidation of the aluminum in the exposed regions, rail layer regions of oxide are formed which after the removal of the mask cover can themselves be used as an etching mask in order to provide a recessed region between two respective rails by means of chemical wet etching.
    Type: Grant
    Filed: August 6, 1984
    Date of Patent: November 25, 1986
    Assignee: International Business Machines
    Inventors: Holger Hinkel, Gerhard Kaus, Ulrich Kuenzel, Gerhard Schmid