Patents by Inventor Gerhard Silvester Neugschwandtner

Gerhard Silvester Neugschwandtner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for producing a junction region between a trench and a semiconductor zone surrounding the trench
    Patent number: 7303961
    Abstract: A method for producing a junction region (2, 5, 6, 7) between a trench (3) and a semiconductor zone (2) surrounding the trench (3) in a trench semiconductor device (1) has the following steps: application of an oxidation barrier layer (15) to an upper part (O) of the inner walls of the trench (3), and production of a first oxide layer (7) on a lower part (U) of the inner walls, said lower part not being covered by the oxidation barrier layer (15), by means of thermal oxidation of the uncovered (U) part of the inner walls.
    Type: Grant
    Filed: December 30, 2004
    Date of Patent: December 4, 2007
    Assignee: Infineon Technologies AG
    Inventors: Hans Weber, Gerhard Silvester Neugschwandtner, Martin Poelzl