Abstract: A system for ion-beam imaging of a structure of a mask on a wafer has a two-lens set between the mask and the wafer which is made up of a preferably accelerating Einzel lens proximal to the mask and an asymmetric accelerating Einzel proximal to the wafer.

Abstract: In an ion optical imaging system, especially for lithographic imaging on a wafer, two collecting lenses are provided between the mask and the wafer. At least one of the collecting lenses is a three-electrode grid lens, i.e. a lens in which a grid is disposed perpendicular to the optical axis between a pair of tubular electrodes.

Abstract: A system for ion-beam imaging of a structure of a mask on a wafer has a two-lens set between the mask and the wafer which is one of the following combinations: (a) two accelerating Einzel lenses; (b) an accelerating immersion lens and a decelerating immersion lens wherein the accelerating immersion lens is the first collecting lens following the mask; (c) an accelerating immersion lens and a decelerating asymmetric Einzel lens wherein the accelerating immersion lens is the first collecting lens following the mask; (d) an accelerating asymmetric Einzel lens and a decelerating immersion lens wherein the accelerating asymmetric Einzel lens is the first collecting lens following the mask; and (e) an accelerating asymmetric Einzel lens and a decelerating asymmetric Einzel lens wherein the accelerating asymmetric Einzel lens is the first collecting lens following the mask.

Abstract: In addition to the three electrodes of a unipotential lens following a plasma chamber, an ion source for ion beam lithography or ion beam semiconductor or the like has a fourth electrode which is at the same potential as the second electrode and at a potential lower than the potential of the first and third electrodes The result is improved resolution.

Abstract: Apparatus and method for projection ion beam lithography are described which allow formation of low distortion, large field, reduced images of a mask pattern at a wafer plane using an optical column of practical size. The column shown is comprised of an accelerating Einzel lens followed by a gap lens, with numerous cooperating features. By coordinated selection of the parameters of the optical column, lens distortion and chromatic blurring are simultaneously minimized. Real time measurement of the position of the image field with respect to the existing pattern on the wafer is employed before and during the time of exposure of the new field and means are provided to match the new field to the existing pattern even when the latter has been distorted by processing. A metrology system enables convenient calibration and adjustment of the apparatus.

Abstract: In an ion projection lithography system, apparatus and methods for positioning on a substrate or wafer at a target station an image of structures provided on a mask, wherein the mask includes reference marks to provide ion reference beams about the image field, the target station includes marks and the beam of the system is controlled to establish a coincidence of the marks on the mask with the corresponding marks at the target station. The ion projection system shown includes in this optical path an electrostatic multipole, means for rotational adjustment of the image relative to the substrate, and means for correcting the scale of the image. Embodiments are shown in which the marks at the target station are carried on the wafer or on a reference block which is positionally related to the wafer, e.g., by an interferometer.

Abstract: The invention concerns an ion beam apparatus, by means of which defects in a substrate can be recognized, and repaired under continuous control. For this purpose, the ion beam apparatus, in its beams path, after the ion source, is equipped with a mask exhibiting a preferrably circular hole and between ion source and mask with a controllable lens for the purpose of modification of the divergence angle under which the beam strikes the mask. The aperture of the mask is imaged upon the substrate. In this way the intensity of the ion beam may be varied for use in inspecting a substrate for defects and subsequently removing the detected defects.

Abstract: An ion projection lithography system provides an immersion lens between the mask and the substrate, a mask between the immersion lens and the ion source and ExB fiter between the mask and the source but cooperating with a diaphragm located close to the crossing point or focal point of the immersion lens so that ions of undesired mass are rejected from the beam by impingement upon the diaphragm while utilizing low magnetic and electrical field strengths of the ExB filter.

Abstract: The mask of our invention can be used in image forming units, for example in ion projection microlithography. The mask comprises a mask foil clamped into a retaining frame. The mask foil has a larger thermal expansion coefficient than the retaining frame. To make this mask the mask foil and retaining frame are heatead to a higher temperature than room temperature and clamped in position at this temperature.

Abstract: A multipole corrective element with the individual poles being electromagnetically energized individually and selectively to create a variable field around a charged particle beam projected through a mask and a lens system onto a substrate, e.g. an ion-beam or electron-beam microlithography. The corrective element is provided independently of the ion-optical lens system between the latter and the mask, preferably proximal to the mask.

Abstract: An ion-projecting apparatus which has between the ion source and the mask, directly proximal to the mask, at least one ion optical correction element in the form of a multipole with at least eight poles and so located that there is no other deflection means between the octapole and the mask.

Abstract: An apparatus and method for the fine alignment of a mask with a substrate in ion-projection lithography, e.g. for the production of integrated circuit chips, utilizes a multipole, an axial magnetic field generator and a scale controlling projection lens in the path of the beam. The mask is provided with markings which are imaged on the substrate and brought into registry with corresponding markings thereon utilizing pairs of detectors associated with each linear marking and responsive to secondary emission of the ion-beam marking projected on the substrate. All of the markings are straight lines.

Abstract: The invention is a process for making a transmission mask which can be used in structuring a semiconductor substrate in an additive or subtractive way by two galvanic depositions of layers of which one provides the mask structure and the other a grid structure covering the openings in the mask structure. The thickness of the structure is freely selectable self-adjusting (within the limits of the known engineering methods). The aim is the production of a transmission mask with a constant effective thickness above the mask surface.

Abstract: Our invention is a process for stabilizing a projection mask which is put in operation at an elevated temperature. The frame containing the mask foil is heated to a temperature which is higher than the temperature of the mask foil. The mask foil is thus kept under tension by controlling the temperature of the frame it is held in and distortions like the distortions which would otherwise occur in long time operation and as conditioned by the mask foil hanging through it are avoided. The effect of the expansion of the mask foil can be compensated in the image forming unit by correction of the image formation scale.

Abstract: Mask for use in the treatment of substrates with an image-forming medium. The mask foil is thermally prestressed by the frame at the temperature of use. For this purpose, the material of the frame has a higher coefficient of thermal expansion than the material of the mask foil. A method of manufacturing such masks includes the step wherein the mask foil is mounted in the frame at a temperature which lies below the temperature of use.