Patents by Inventor Gerhard Strobl
Gerhard Strobl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11605745Abstract: A stacked III-V semiconductor photonic device having a second metallic terminal contact layer at least formed in regions, a highly doped first semiconductor contact region of a first conductivity type, a very low doped absorption region of the first or second conductivity type having a layer thickness of 20 ?m-2000 ?m, a first metallic terminal contact layer, wherein the first semiconductor contact region extends into the absorption region in a trough shape, the second metallic terminal contact layer is integrally bonded to the first semiconductor contact region and the first metallic terminal contact layer is arranged below the absorption region. In addition, the stacked III-V semiconductor photonic device has a doped III-V semiconductor passivation layer of the first or second conductivity type, wherein the III-V semiconductor passivation layer is arranged at a first distance of at least 10 ?m to the first semiconductor contact region.Type: GrantFiled: March 22, 2021Date of Patent: March 14, 2023Assignee: AZUR SPACE Solar Power GmbHInventor: Gerhard Strobl
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Patent number: 11594570Abstract: A III-V semiconductor pixel X-ray detector, including an absorption region of a first or a second conductivity type, at least nine semiconductor contact regions of the second conductivity type arranged in a matrix along the upper side of the absorption region, and optionally a semiconductor contact layer of the first conductivity type, a metallic front side connecting contact being arranged beneath the absorption region, and a metallic rear side connecting contact being arranged above each semiconductor contact region, and a semiconductor passivation layer of the first or the second conductivity type. The semiconductor passivation layer and the absorption region being lattice-matched to each other. The semiconductor passivation layer being arranged in regions on the upper side of the absorption region. The semiconductor passivation layer having a minimum distance of at least 2 ?m or at least 20 ?m with respect to each highly doped semiconductor contact region.Type: GrantFiled: March 22, 2021Date of Patent: February 28, 2023Assignee: AZUR SPACE Solar Power GmbHInventor: Gerhard Strobl
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Patent number: 11329182Abstract: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.Type: GrantFiled: March 23, 2021Date of Patent: May 10, 2022Assignee: AZUR SPACE Solar Power GmbHInventors: Matthias Meusel, Gerhard Strobl, Frank Dimroth, Andreas Bett
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Patent number: 11211516Abstract: A stack-like III-V semiconductor product comprising a substrate and a sacrificial layer region arranged on an upper side of the substrate and a semiconductor layer arranged on an upper side of the sacrificial layer region. The substrate, the sacrificial layer region and the semiconductor layer region each comprise at least one chemical element from the main groups III and a chemical element from the main group V. The sacrificial layer region differs from the substrate and from the semiconductor layer in at least one element. An etching rate of the sacrificial layer region differs from an etching rate of the substrate and from an etching rate of the semiconductor layer region at least by a factor of ten. The sacrificial layer region is adapted in respect of its lattice to the substrate and to the semiconductor layer region.Type: GrantFiled: September 28, 2020Date of Patent: December 28, 2021Assignee: AZUR SPACE Solar Power GmbHInventor: Gerhard Strobl
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Publication number: 20210296515Abstract: A stacked III-V semiconductor photonic device having a second metallic terminal contact layer at least formed in regions, a highly doped first semiconductor contact region of a first conductivity type, a very low doped absorption region of the first or second conductivity type having a layer thickness of 20 ?m-2000 ?m, a first metallic terminal contact layer, wherein the first semiconductor contact region extends into the absorption region in a trough shape, the second metallic terminal contact layer is integrally bonded to the first semiconductor contact region and the first metallic terminal contact layer is arranged below the absorption region. In addition, the stacked III-V semiconductor photonic device has a doped III-V semiconductor passivation layer of the first or second conductivity type, wherein the III-V semiconductor passivation layer is arranged at a first distance of at least 10 ?m to the first semiconductor contact region.Type: ApplicationFiled: March 22, 2021Publication date: September 23, 2021Applicant: AZUR SPACE Solar Power GmbHInventor: Gerhard STROBL
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Publication number: 20210296391Abstract: A III-V semiconductor pixel X-ray detector, including an absorption region of a first or a second conductivity type, at least nine semiconductor contact regions of the second conductivity type arranged in a matrix along the upper side of the absorption region, and optionally a semiconductor contact layer of the first conductivity type, a metallic front side connecting contact being arranged beneath the absorption region, and a metallic rear side connecting contact being arranged above each semiconductor contact region, and a semiconductor passivation layer of the first or the second conductivity type. The semiconductor passivation layer and the absorption region being lattice-matched to each other. The semiconductor passivation layer being arranged in regions on the upper side of the absorption region. The semiconductor passivation layer having a minimum distance of at least 2 ?m or at least 20 ?m with respect to each highly doped semiconductor contact region.Type: ApplicationFiled: March 22, 2021Publication date: September 23, 2021Applicant: AZUR SPACE Solar Power GmbHInventor: Gerhard STROBL
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Publication number: 20210210649Abstract: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.Type: ApplicationFiled: March 23, 2021Publication date: July 8, 2021Applicant: AZUR SPACE Solar Power GMBHInventors: Matthias MEUSEL, Gerhard STROBL, Frank DIMROTH, Andreas BETT
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Patent number: 10985288Abstract: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.Type: GrantFiled: September 15, 2017Date of Patent: April 20, 2021Assignee: AZUR SPACE Solar Power GmbHInventors: Matthias Meusel, Gerhard Strobl, Frank Dimroth, Andreas Bett
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Publication number: 20210013363Abstract: A stack-like III-V semiconductor product comprising a substrate and a sacrificial layer region arranged on an upper side of the substrate and a semiconductor layer arranged on an upper side of the sacrificial layer region. The substrate, the sacrificial layer region and the semiconductor layer region each comprise at least one chemical element from the main groups HI and a chemical element from the main group V. The sacrificial layer region differs from the substrate and from the semiconductor layer in at least one element. An etching rate of the sacrificial layer region differs from an etching rate of the substrate and from an etching rate of the semiconductor layer region at least by a factor of ten. The sacrificial layer region is adapted in respect of its lattice to the substrate and to the semiconductor layer region.Type: ApplicationFiled: September 28, 2020Publication date: January 14, 2021Applicant: AZUR SPACE SOLAR POWER GMBHInventor: Gerhard STROBL
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Patent number: 10490683Abstract: A stacked integrated multi-junction solar cell, having a first subcell, whereby the first subcell has a layer of an InGaP compound with a first lattice constant and a first band gap energy, and the thickness of the layer is greater than 100 nm and the layer is formed as part of an emitter and/or as part of the base and/or as part of the space charge region lying between the emitter and base, and a second subcell with a second lattice constant and a second band gap energy, and a third subcell with a third lattice constant and a third band gap energy, and a fourth subcell with a fourth lattice constant and a fourth band gap energy, and a region with a wafer bond is formed between two subcells.Type: GrantFiled: October 23, 2015Date of Patent: November 26, 2019Assignee: Azur Space Solar Power GmbHInventors: Wolfgang Guter, Gerhard Strobl, Frank Dimroth, Alexandre William Walker
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Publication number: 20180062018Abstract: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.Type: ApplicationFiled: September 15, 2017Publication date: March 1, 2018Applicant: AZUR SPACE Solar Power GMBHInventors: Matthias MEUSEL, Gerhard STROBL, Frank DIMROTH, Andreas BETT
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Patent number: 9799789Abstract: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.Type: GrantFiled: January 5, 2016Date of Patent: October 24, 2017Assignee: Azur Space Solar Power GmbHInventors: Matthias Meusel, Gerhard Strobl, Frank Dimroth, Andreas Bett
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Patent number: 9748426Abstract: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.Type: GrantFiled: January 17, 2016Date of Patent: August 29, 2017Assignee: Azur Space Solar Power GmbHInventors: Matthias Meusel, Gerhard Strobl, Frank Dimroth, Andreas Bett
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Patent number: 9741888Abstract: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.Type: GrantFiled: January 5, 2016Date of Patent: August 22, 2017Assignee: Azur Space Solar Power GmbHInventors: Matthias Meusel, Gerhard Strobl, Frank Dimroth, Andreas Bett
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Patent number: 9502598Abstract: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.Type: GrantFiled: January 5, 2016Date of Patent: November 22, 2016Assignee: Azur Space Solar Power GmbHInventors: Matthias Meusel, Gerhard Strobl, Frank Dimroth, Andreas Bett
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Patent number: 9437767Abstract: A multi-junction solar cell having a Ge or GaAs substrate, as well as a solar cell structure having several subcells deposited on the substrate, the substrate having peripheral side faces, and the solar cell structure having a peripheral circumferential surface, which runs spaced apart from the side faces. To prevent oxidation and penetration of moisture, the circumferential surface of the solar cell structure is coated with a protective, electrically insulating first coating under essential exclusion of the upper surface facing the rays, or that without encroaching on the solar cell structure, the side faces of the substrate are coated with a protective, electrically insulating second coating or that both the side faces of the substrate as well as the circumferential surface of the solar cell structure are coated with a third coating by essential exclusion of the upper surface facing the rays.Type: GrantFiled: April 17, 2015Date of Patent: September 6, 2016Assignee: Azur Space Solar Power GmbHInventor: Gerhard Strobl
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Publication number: 20160211400Abstract: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.Type: ApplicationFiled: January 5, 2016Publication date: July 21, 2016Applicant: Azur Space Solar Power GmbHInventors: Matthias MEUSEL, Gerhard STROBL, Frank DIMROTH, Andreas BETT
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Publication number: 20160211401Abstract: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.Type: ApplicationFiled: January 5, 2016Publication date: July 21, 2016Applicant: Azur Space Solar Power GmbHInventors: Matthias Meusel, Gerhard Strobl, Frank Dimroth, Andreas Bett
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Publication number: 20160133773Abstract: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.Type: ApplicationFiled: January 17, 2016Publication date: May 12, 2016Applicant: Azur Space Solar Power GmbHInventors: Matthias MEUSEL, Gerhard STROBL, Frank DIMROTH, Andreas BETT
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Publication number: 20160133770Abstract: A monolithic multiple solar cell includes at least three partial cells, with a semiconductor mirror placed between two partial cells. The aim of the invention is to improve the radiation stability of said solar cell. For this purpose, the semiconductor mirror has a high degree of reflection in at least one part of a spectral absorption area of the partial cell which is arranged above the semiconductor mirror and a high degree of transmission within the spectral absorption range of the partial cell arranged below the semiconductor mirror.Type: ApplicationFiled: January 5, 2016Publication date: May 12, 2016Applicant: Azur Space Solar Power GmbHInventors: Matthias MEUSEL, Gerhard STROBL, Frank DIMROTH, Andreas BETT