Patents by Inventor Gerhard Welsch

Gerhard Welsch has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050168919
    Abstract: A capacitor anode (1) includes a substrate (10) which is formed from an alloy, metal, or metal compound which has a high tensile yield strength and high elastic modulus. The material has a composition which can be anodized, yielding an adherent and compressively stressed dielectric film (12) of pure, mixed, alloyed, or doped oxide that has a high usable dielectric strength (e.g., over 50 V/?m) and high dielectric constant (e.g., 20 to over 10,000). A capacitor formed from the anode has a high energy density.
    Type: Application
    Filed: January 12, 2005
    Publication date: August 4, 2005
    Inventors: Gerhard Welsch, Donald McGervey
  • Patent number: 6495021
    Abstract: A dendritic sponge which is directionally-grown on a substrate material has a high surface to volume ratio and is suitable for forming anodes for highly efficient capacitors. A dielectric film is formed on the sponge surface by oxidizing the surface. In a preferred embodiment, the dielectric is grown on titanium sponge and is doped with oxides of Ca, Mg, Sr, Be, or Ba to improve the film's dielectric constant or with higher valent cations, such as Cr6+, V5+, Ta5+, Mo6+, Nb5+, W6+, and P5+, to reduce the oxygen vacancy concentration and leakage current of the dielectric film. A capacitor formed from the sponge includes a cathode electrolyte which serves as an electrical conductor and to repair the dielectric film by re-oxidizing the anode surface at areas of local breakdown. Sponges of titanium, tantalum, and aluminum form efficient dielectric films.
    Type: Grant
    Filed: March 16, 2001
    Date of Patent: December 17, 2002
    Assignee: Case Western Reserve University
    Inventors: Gerhard Welsch, Donald McGervey
  • Publication number: 20010038881
    Abstract: A dendritic sponge which is directionally-grown on a substrate material has a high surface to volume ratio and is suitable for forming anodes for highly efficient capacitors. A dielectric film is formed on the sponge surface by oxidizing the surface. In a preferred embodiment, the dielectric is grown on titanium sponge and is doped with oxides of Ca, Mg, Sr, Be, or Ba to improve the film's dielectric constant or with higher valent cations, such as Cr6+, V5+, Ta5+, Mo6+, Nb5+, W6+, and P5+, to reduce the oxygen vacancy concentration and leakage current of the dielectric film. A capacitor formed from the sponge includes a cathode electrolyte which serves as an electrical conductor and to repair the dielectric film by re-oxidizing the anode surface at areas of local breakdown. Sponges of titanium, tantalum, and aluminum form efficient dielectric films. In another embodiment, sponges of elements which do not form efficient dielectric films are coated with a dielectric material.
    Type: Application
    Filed: March 16, 2001
    Publication date: November 8, 2001
    Inventors: Gerhard Welsch, Donald McGervey
  • Patent number: 6226173
    Abstract: A dendritic sponge which is directionally-grown on a substrate material has a high surface to volume ratio and is suitable for forming anodes for highly efficient capacitors. A dielectric film is formed on the sponge surface by oxidizing the surface. In a preferred embodiment, the dielectric is grown on titanium sponge and is doped with oxides of Ca, Mg, Sr, Be, or Ba to improve the film's dielectric constant or with higher valent cations, such as Cr6+, V5+, Ta5+, Mo6+, Nb5+, W6+, and P5+, to reduce the oxygen vacancy concentration and leakage current of the dielectric film. A capacitor formed from the sponge includes a cathode electrolyte which serves as an electrical conductor and to repair the dielectric film by re-oxidizing the anode surface at areas of local breakdown. Sponges of titanium, tantalum, and aluminum form efficient dielectric films.
    Type: Grant
    Filed: January 26, 1999
    Date of Patent: May 1, 2001
    Assignee: Case Western Reserve University
    Inventors: Gerhard Welsch, Donald McGervey
  • Patent number: 4931253
    Abstract: A method for producing a titanium alloy powder metallurgy article having high resistance to loading and creep at high temperature is described and comprises the steps of simultaneously pressing a preselected quantity of titanium alloy powder at from 15 to 60 ksi and heating the powder to a temperature just below the beta transus temperature of the alloy to promote beta to alpha phase transformation in the alloy, and then slowly cooling the compacted powder under pressure.
    Type: Grant
    Filed: August 7, 1989
    Date of Patent: June 5, 1990
    Assignee: United States of America as represented by the Secretary of the Air Force
    Inventors: Daniel Eylon, Francis H. Froes, Gerhard Welsch