Patents by Inventor Gerhard Zojer

Gerhard Zojer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9378317
    Abstract: A semiconductor chip having a current source coupled between a first potential and an electrical node, a detection circuit having an input coupled to the electrical node, and a first active component coupled in series with the current source and further coupled between the electrical node and a second potential, wherein the first active component is coupled to the electrical node via a first conductive interconnect.
    Type: Grant
    Filed: October 2, 2013
    Date of Patent: June 28, 2016
    Assignee: Infineon Technologies AG
    Inventors: Andreas Tschmelitsch, Gerhard Zojer, Guenter Holl, Guentr Herzele
  • Patent number: 9252140
    Abstract: One aspect of the invention relates to a semiconductor chip with a semiconductor body. The semiconductor body has an inner region and a ring-shaped outer region. An electronic structure is monolithically integrated in the inner region and has a controllable first semiconductor component with a first load path and a first control input for controlling the first load path. Further, a ring-shaped second electronic component is monolithically integrated in the outer region and surrounds the inner region. Moreover, the second electronic component has a second load path that is electrically not connected in parallel to the first load path.
    Type: Grant
    Filed: March 22, 2012
    Date of Patent: February 2, 2016
    Assignee: Infineon Technologies AG
    Inventors: Gerhard Zojer, Daniel Auer, Gerrit Utz, Claudia Kabusch
  • Patent number: 8766444
    Abstract: An integrated circuit as described herein includes an upper interconnect level including a continuous upper interconnect area, the continuous upper interconnect area including a plurality of upper contact openings. The integrated circuit further includes a lower interconnect level including a continuous lower interconnect area, the continuous lower interconnect area including a plurality of lower contact openings. First contacts extend through the lower contact openings to the upper interconnect area and second contact openings extend through the upper contact openings to the lower interconnect area.
    Type: Grant
    Filed: January 11, 2013
    Date of Patent: July 1, 2014
    Assignee: Infineon Technologies AG
    Inventors: Herbert Gietler, Gerhard Zojer, Benjamin Finke
  • Publication number: 20140040853
    Abstract: A semiconductor chip having a current source coupled between a first potential and an electrical node, a detection circuit having an input coupled to the electrical node, and a first active component coupled in series with the current source and further coupled between the electrical node and a second potential, wherein the first active component is coupled to the electrical node via a first conductive interconnect.
    Type: Application
    Filed: October 2, 2013
    Publication date: February 6, 2014
    Applicant: Infineon Technologies AG
    Inventors: Andreas Tschmelitsch, Gerhard Zojer, Guenter Holl, Guentr Herzele
  • Patent number: 8575723
    Abstract: A semiconductor chip having a current source coupled between a first potential and an electrical node, a detection circuit having an input coupled to the electrical node, and a first active component coupled in series with the current source and further coupled between the electrical node and a second potential, wherein the first active component is coupled to the electrical node via a first conductive interconnect.
    Type: Grant
    Filed: August 10, 2007
    Date of Patent: November 5, 2013
    Assignee: Infineon Technologies AG
    Inventors: Andreas Tschmelitsch, Gerhard Zojer, Guenter Holl, Guenter Herzele
  • Publication number: 20130249018
    Abstract: One aspect of the invention relates to a semiconductor chip with a semiconductor body. The semiconductor body has an inner region and a ring-shaped outer region. An electronic structure is monolithically integrated in the inner region and has a controllable first semiconductor component with a first load path and a first control input for controlling the first load path. Further, a ring-shaped second electronic component is monolithically integrated in the outer region and surrounds the inner region. Moreover, the second electronic component has a second load path that is electrically not connected in parallel to the first load path.
    Type: Application
    Filed: March 22, 2012
    Publication date: September 26, 2013
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Gerhard Zojer, Daniel Auer, Gerrit Utz, Claudia Kabusch
  • Patent number: 8378491
    Abstract: An integrated circuit as described herein includes an upper interconnect level including a continuous upper interconnect area, the continuous upper interconnect area including a plurality of upper contact openings. The integrated circuit further includes a lower interconnect level including a continuous lower interconnect area, the continuous lower interconnect area including a plurality of lower contact openings. First contacts extend through the lower contact openings to the upper interconnect area and second contact openings extend through the upper contact openings to the lower interconnect area.
    Type: Grant
    Filed: August 24, 2010
    Date of Patent: February 19, 2013
    Assignee: Infineon Technologies AG
    Inventors: Herbert Gietler, Gerhard Zojer, Benjamin Finke
  • Publication number: 20120049373
    Abstract: An integrated circuit as described herein includes an upper interconnect level including a continuous upper interconnect area, the continuous upper interconnect area including a plurality of upper contact openings. The integrated circuit further includes a lower interconnect level including a continuous lower interconnect area, the continuous lower interconnect area including a plurality of lower contact openings. First contacts extend through the lower contact openings to the upper interconnect area and second contact openings extend through the upper contact openings to the lower interconnect area.
    Type: Application
    Filed: August 24, 2010
    Publication date: March 1, 2012
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Herbert Gietler, Gerhard Zojer, Benjamin Finke
  • Patent number: 8026727
    Abstract: A circuit arrangement comprises a fuse element from which degradation can start. The circuit arrangement also comprises a sensor element for detecting the degradation, and a circuit part to be protected. The sensor element can detect degradation into a region between the fuse element and the circuit part to be protected.
    Type: Grant
    Filed: May 8, 2009
    Date of Patent: September 27, 2011
    Assignee: Infineon Technologies AG
    Inventors: Benjamin Finke, Herbert Gietler, Gerhard Zojer
  • Patent number: 7759955
    Abstract: A semiconductor and method is disclosed. One embodiment includes a detector arrangement to detect the position of a connection element. A probe tip, the detector arrangement including first connection pads are arranged on a substrate surface. A first circuit is connected to the first connection pads.
    Type: Grant
    Filed: December 21, 2007
    Date of Patent: July 20, 2010
    Assignee: Infineon Technologies AG
    Inventors: Franz Reinwald, Gerhard Zojer
  • Publication number: 20090278404
    Abstract: A circuit arrangement comprises a fuse element from which degradation can start. The circuit arrangement also comprises a sensor element for detecting the degradation, and a circuit part to be protected. The sensor element can detect degradation into a region between the fuse element and the circuit part to be protected.
    Type: Application
    Filed: May 8, 2009
    Publication date: November 12, 2009
    Applicant: Infineon Technologies AG
    Inventors: Benjamin Finke, Herbert Gietler, Gerhard Zojer
  • Publication number: 20090160470
    Abstract: A semiconductor and method is disclosed. One embodiment includes a detector arrangement to detect the position of a connection element. A probe tip, the detector arrangement including first connection pads are arranged on a substrate surface. A first circuit is connected to the first connection pads.
    Type: Application
    Filed: December 21, 2007
    Publication date: June 25, 2009
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Franz Reinwald, Gerhard Zojer
  • Publication number: 20080035923
    Abstract: A semiconductor chip having a current source coupled between a first potential and an electrical node, a detection circuit having an input coupled to the electrical node, and a first active component coupled in series with the current source and further coupled between the electrical node and a second potential, wherein the first active component is coupled to the electrical node via a first conductive interconnect.
    Type: Application
    Filed: August 10, 2007
    Publication date: February 14, 2008
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Andreas Tschmelitsch, Gerhard Zojer, Guenter Holl, Guenter Herzele