Abstract: Sputtering apparatus using a collimating filter to limit the angles at which sputtered particles will reach the surface of the substrate or workpiece being processed is shown. The sputtering apparatus relies on a combination of a planar sputter source larger in size than the workpiece and having highly uniform emission characteristics across the much of its surface, including its center; a collimating filter; and low operating pressure to avoid scattering of sputtered atoms after they have passed through the collimation filter. In the preferred embodiment, the collimation filter is made from a material which has substantially the same thermal coefficient of expansion as the film which is deposited on the substrate. In one specific embodiment, a titanium collimation filter is used when the sputtering system is used to deposit films of titanium, titanium nitride or titanium/tungsten alloy.

Abstract: A method for automatically controlling a collimated sputtering source that is controllable by a computer to compensate for the build-up of sputtered material on the collimator. The method involves providing software for the computer including a formula to calculate a multiplier as a function of the age of the collimator, sequentially depositing film on a series of substrates using the sputtering source, monitoring the age of the collimator, and using the software to periodically adjust the value of a controllable sputtering parameter as a function of the multiplier. The sputtering parameter is automatically adjusted by the software such that a property of the film deposited by the source on the series of substrates does not substantially vary among the substrates as sputtered material builds up on the collimator.