Patents by Inventor Gerko Oskam

Gerko Oskam has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6309969
    Abstract: The invention is directed to the use of copper as via and interconnect structures for an integrated circuit. The process in accordance with a preferred embodiment produces an interconnect layer of continuous copper with superior adhesion while requiring only a minimum number of steps for its production. This process addresses the current need in semiconductor manufacturing for reliable and performance-oriented vias and interconnect structures, while not being susceptible to many of the problems which plague the use of aluminum for similar structures. Fabrication of an integrated circuit in accordance with a preferred embodiment of the invention begins with the formation of semiconductor devices on a silicon wafer. Next, an intermetallic dielectric layer (IDL) is formed by materials such as silicon dioxide (SiO2), polymide, or silicon nitride over the devices. This step is followed by the laying of a diffusion barrier layer on the IDL surface.
    Type: Grant
    Filed: November 3, 1998
    Date of Patent: October 30, 2001
    Assignee: The John Hopkins University
    Inventors: Gerko Oskam, Peter C. Searson, Philippe M. Vereecken, John G. Long, Peter M. Hoffmann
  • Publication number: 20010001081
    Abstract: The invention is directed to the use of copper as via and interconnect structures for an integrated circuit. The process in accordance with a preferred embodiment produces an interconnect layer of continuous copper with superior adhesion while requiring only a minimum number of steps for its production. This process addresses the current need in semiconductor manufacturing for reliable and performance-oriented vias and interconnect structures, while not being susceptible to many of the problems which plague the use of aluminum for similar structures. Fabrication of an integrated circuit in accordance with a preferred embodiment of the invention begins with the formation of semiconductor devices on a silicon wafer. Next, an intermetallic dielectric layer (IDL) is formed by materials such as silicon dioxide (SiO2), polymide, or silicon nitride over the devices. This step is followed by the laying of a diffusion barrier layer on the IDL surface.
    Type: Application
    Filed: December 12, 2000
    Publication date: May 10, 2001
    Inventors: Gerko Oskam, Peter C. Searson, Philippe M. Vereecken, John G. Long, Peter M. Hoffmann
  • Patent number: 6019803
    Abstract: An electrochemical supercapacitor or lithium ion intercalation battery formed from carbon particles distributed in a carbon/ceramic composite paste preferably produced by sol-gel technology wherein the paste is shaped and contacted with a solvent and electrolyte salt followed by an optional washing with an aqueous or non-aqueous solution to remove residual organic solvent and salt and leaving a shaped composite having the internal microscopic surface area electrochemically accessible and useful for charge storage applications.
    Type: Grant
    Filed: May 22, 1997
    Date of Patent: February 1, 2000
    Assignee: The Johns Hopkins University
    Inventors: Gerko Oskam, Peter Charles Searson