Abstract: A method and a system for the automated digital archiving of data comprises (1) a writing step in which data are subjected to a first algorithm producing an encoded file which is written into or onto a durable storage medium, preferably with an expected lifetime exceeding 50 years, in a machine-recognizable pattern with a predefined high density and (2) a reading step, in which the storage medium is scanned to obtain an image of the pattern, e.g. a raster graphic of the image, transferring the image to a memory, and storing it therein. Subsequently, by means of pattern recognition, the bits in the data pattern are identified, the value/sequence of these bits determined, and a bit stream for readout produced.

Abstract: The present invention provides a microelectronic device comprising a resistance structure including a plurality of programmable resistance layers and at least one intermediate layer such that an intermediate layer is placed between two programmable resistance layers. The programmable resistance layers can be individually doped or may consist of different materials. Each programmable resistance layer may be optimized for a specific application. The microelectronic device can be used as a programmable resistor or a memory cell as it exhibits switchable electrical resistance and does not require a time-consuming conditioning process.

Abstract: This invention concerns an improvement of the supercurrent carrying capabilities, i.e. the increase of critical current densities, of polycrystalline superconductor structures, especially of high-Tc superconductors fabricated with a coated conductor technique to provide superconducting layers containing flat grains. A superconductor with superior critical current density is obtained by joining, i.e. pressing or otherwise bringing into intensive facial contact, preferably superconducting contact, two or more such superconducting layers.

Abstract: The present invention concerns the improvement of the supercurrent carrying capabilities, i.e. the increase of critical current densities, of bicrystalline or polycrystalline superconductor structures, especially of high-Tc superconductors. By providing an appropriate predetermined dopant profile across the superconductor structure, in particular within or in the vicinity of the grain boundaries, the space-charge layers at the grain boundaries are reduced and thereby the current transport properties of the superconductor significantly improved. Simultaneously, the influence of magnetic fields on the critical current densities is significantly reduced, which in turn enhances the overall supercurrent carrying capabilities while keeping the supercurrent transport properties of the grains at good values.

Abstract: The present invention concerns the improvement of the supercurrent carrying capabilities, i.e. the increase of critical current densities, of bicrystalline or polycrystalline superconductor structures, especially of high-Tc superconductors. By providing an appropriate predetermined dopant profile across the superconductor structure, in particular within or in the vicinity of the grain boundaries, the space-charge layers at the grain boundaries are reduced and thereby the current transport properties of the superconductor significantly improved. Simultaneously, the influence of magnetic fields on the critical current densities is significantly reduced, which in turn enhances the overall supercurrent carrying capabilities while keeping the supercurrent transport properties of the grains at good values.

Abstract: The present invention concerns the improvement of the supercurrent carrying capabilities, i.e. the increase of critical current densities, of bicrystalline or polycrystalline superconductor structures, especially of high-Tc superconductors. By providing an appropriate predetermined dopant profile across the superconductor structure, in particular within or in the vicinity of the grain boundaries, the space-charge layers at the grain boundaries are reduced and thereby the current transport properties of the superconductor significantly improved. Simultaneously, the influence of magnetic fields on the critical current densities is significantly reduced, which in turn enhances the overall supercurrent carrying capabilities while keeping the supercurrent transport properties of the grains at good values.

Abstract: The present invention concerns the improvement of the supercurrent carrying capabilities, i.e. the increase of critical current densities, of bicrystalline or polycrystalline superconductor structures, especially of high-Tc superconductors. By providing an appropriate predetermined dopant profile across the superconductor structure, in particular within or in the vicinity of the grain boundaries, the space-charge layers at the grain boundaries are reduced and thereby the current transport properties of the superconductor significantly improved. Simultaneously, the influence of magnetic fields on the critical current densities is significantly reduced, which in turn enhances the overall supercurrent carrying capabilities while keeping the supercurrent transport properties of the grains at good values.