Patents by Inventor Gernia Tang

Gernia Tang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for forming a DRAM memory cell with tapered capacitor electrodes
    Patent number: 5354716
    Abstract: A DRAM cell structure having a capacitance electrode with a tapered end surface is disclosed. Accordingly, the cell structure of this invention provides increased yield without increasing the number of process steps required to form the cell structure, A unique process for forming the capacitance electrode with a tapered end surface is also provided.
    Type: Grant
    Filed: July 10, 1991
    Date of Patent: October 11, 1994
    Assignee: NEC Electronics, Inc.
    Inventors: Gary A. Pors, Gernia Tang
  • DRAM memory cell with tapered capacitor electrodes
    Patent number: 5068707
    Abstract: A DRAM cell structure having a capacitance electrode with a tapered end surface is disclosed. The tapered end surface eliminates prior art structures formed during fabrication of the cell structure that decreased yield. The cell structure of this invention provides increased yield without increasing the number of process steps required to form the cell structure. A unique process for forming the capacitance electrode with a tapered end surface is also provided.
    Type: Grant
    Filed: May 2, 1990
    Date of Patent: November 26, 1991
    Assignee: NEC Electronics Inc.
    Inventors: Gary A. Pors, Gernia Tang