Abstract: A semiconductor device wafer includes a plurality of device patterns formed in or over a semiconductor substrate, and a scribe area from which the device patterns are excluded. A plurality of dummy features are located in at least one material level in the scribe area, including over laser scribe dots formed in the semiconductor substrate.

Abstract: A semiconductor device wafer includes a plurality of device patterns formed in or over a semiconductor substrate, and a scribe area from which the device patterns are excluded. A plurality of dummy features are located in at least one material level in the scribe area, including over laser scribe dots formed in the semiconductor substrate.

Abstract: A semiconductor device wafer includes a plurality of device patterns formed in or over a semiconductor substrate, and a scribe area from which the device patterns are excluded. A plurality of dummy features are located in at least one material level in the scribe area, including over laser scribe dots formed in the semiconductor substrate.

Abstract: A method of processing semiconductor wafers comprises forming a pattern of recesses in an exposed surface of each wafer in a lot, prior to an epitaxy step. At least one recessed test structure is included in the pattern of recesses. At least one dimension of the recessed test structure is determined prior to the epitaxy step, then a corresponding dimension of an epitaxial structure grown above the recessed test structure in the epitaxy step is measured. A deviation between the dimension of the recessed test structure and the dimension of the epitaxial structure is determined and, from the deviation, the process temperature at which the epitaxy step was performed is determined. In case the deviation exceeds a predetermined limit, the temperature in the process chamber is adjusted for a subsequent lot of wafers to be processed.

Abstract: A method of processing semiconductor waters comprises forming a pattern of recesses in an exposed surface of each water in a lot, prior to an epitaxy step. At least one recessed test structure is included in the pattern of recesses. At least one dimension of the recessed test structure is determined prior to the epitaxy step, then a corresponding dimension of an epitaxial structure grown above the recessed test structure in the epitaxy step is measured. A deviation between the dimension of the recessed test structure and the dimension of the epitaxial structure is determined and, from the deviation, the process temperature at which the epitaxy step was performed is determined. In case the deviation exceeds a predetermined limit, the temperature in the process chamber is adjusted for a subsequent lot of waters to be processed.

Abstract: A method for in-line monitoring a lens controller of a photolithography system in which a plurality of wafers of a lot are processed in succession and which includes a lens for projecting a mask pattern on the wafers and a lens controller for correcting magnification of the lens includes the steps of printing a circuit pattern on each of the wafers of the lot by projecting a mask pattern on the wafers by means of a lens, determining a shot magnification value for a sample of the wafers, and continuously monitoring the variation of the shot magnification values, wherein a variation of the shot magnification values exceeding a first predetermined value indicates a failure of the lens controller.