Abstract: A semiconductor device for infrared detection comprises a stack of a first semiconductor layer, a second semiconductor layer and an optical coupling layer. The first semiconductor layer has a first type of conductivity and the second semiconductor layer has a second type of conductivity. The optical coupling layer comprises an optical coupler and at least a first lateral absorber region. The optical coupler is configured to deflect incident light towards the first lateral absorber region. The first lateral absorber region comprises an absorber material with a bandgap Eg in the infrared, IR.

Abstract: The present disclosure relates to an optoelectronic device for manipulating electromagnetic radiation. Drawbacks of conventional systems like material constraints, system complexity and tuning speed are overcome by the optoelectronic device comprising a substrate with at least one tuning structure arranged on the substrate, wherein the tuning structure comprises an electro-optical material. The tuning structure comprises a first and a second electrical contact. A cover layer covers the at least one tuning structure. An optical structure is arranged on the cover layer. A voltage source is electrically connected to the first and the second electrical contact and provided for generating electric fields within the at least one tuning structure.

Abstract: An optical element for introducing a predetermined phase delay into incident electromagnetic radiation. The optical element comprises a first layer and a second layer arranged in a propagation path of a portion of the electromagnetic radiation. The first layer comprises a transmission regions configured to introduce a first phase delay into the portion of electromagnetic radiation propagating therethrough. The second layer comprises a metasurface configured to introduce a second phase delay into the portion of electromagnetic radiation propagating therethrough. The metasurface comprises subwavelength sized structures .

Abstract: Various embodiments may relate to an optical system. The optical system may include a lens structure configured to generate an outgoing Gaussian beam based on an incoming Gaussian beam. The optical system may also include a light source configured to provide the incoming Gaussian beam to the lens structure. The lens structure may be a flat lens or a phase plate.

Abstract: A surface plasmon-based photodetector includes: a silicon substrate; a grating in contact with a surface of the silicon substrate, in which the grating forms a Schottky diode with the semiconductor substrate; and a complementary-metal-oxide-semiconductor (CMOS) sample and hold stage as well as an analog-to-digital circuit (ADC) in the silicon substrate and arranged to detect electrical current generated at the Schottky diode.

Abstract: A semiconductor device for infrared detection comprises a stack of a first semiconductor layer, a second semiconductor layer and an optical coupling layer. The first semiconductor layer has a first type of conductivity and the second semiconductor layer has a second type of conductivity. The optical coupling layer comprises an optical coupler and at least a first lateral absorber region. The optical coupler is configured to deflect incident light towards the first lateral absorber region. The first lateral absorber region comprises an absorber material with a bandgap Eg in the infrared, IR.

Abstract: A particulate matter sensor module is operable based on sensing light scattered by particulate matter. The sensor includes one or more metalenses, which can help achieve a compact design in some implementations.

Abstract: A semiconductor die includes a semiconductor circuit disposed within or over a substrate. A conductive contact pad is disposed over the substrate outside the semiconductor circuit. A floating electrical path ends at a singulated edge of the die. The electrical path is electrically coupled to the conductive contact pad.

Abstract: A semiconductor die includes a semiconductor circuit disposed within or over a substrate. A conductive contact pad is disposed over the substrate outside the semiconductor circuit. A floating electrical path ends at a singulated edge of the die. The electrical path is electrically coupled to the conductive contact pad.

Abstract: A method for semiconductor fabrication includes forming a first array of semiconductor circuitry and a second array of semiconductor circuitry separated by a singulation region and a contact region. The method also includes forming a first array of process control monitoring structures within the singulation region of a substrate. The method also includes forming a first array of contact pads disposed in the contact region. The method also includes forming electrical connections between the first array of process control monitoring structures and the first array of contact pads, wherein all external electrical connections to the first array of process control monitoring structures are made through the first array of contact pads.

Abstract: A method for semiconductor fabrication includes forming a first array of semiconductor circuitry and a second array of semiconductor circuitry separated by a singulation region and a contact region. The method also includes forming a first array of process control monitoring structures within the singulation region of a substrate. The method also includes forming a first array of contact pads disposed in the contact region. The method also includes forming electrical connections between the first array of process control monitoring structures and the first array of contact pads, wherein all external electrical connections to the first array of process control monitoring structures are made through the first array of contact pads.