Abstract: A gas mixture for treating a substrate in a substrate processing system includes hydrogen fluoride gas, a vapor of an alcohol, an additive consisting of a base, and a carrier gas. The gas mixture can be used to treat high aspect ratio (HAR) structures arranged on a surface of a substrate. A surface of the substrate may be spin rinsed using a first rinsing liquid. The first rinsing liquid is spun off from the surface of the substrate. The gas mixture is directed onto the surface of the substrate after the first rinsing liquid is dispensed.

Abstract: A gas mixture for treating a substrate in a substrate processing system includes hydrogen fluoride gas, a vapor of an alcohol, an additive consisting of a base, and a carrier gas. The gas mixture can be used to treat high aspect ratio (HAR) structures arranged on a surface of a substrate. A surface of the substrate may be spin rinsed using a first rinsing liquid. The first rinsing liquid is spun off from the surface of the substrate. The gas mixture is directed onto the surface of the substrate after the first rinsing liquid is dispensed.

Abstract: Methods and apparatuses for precise trimming of silicon-containing materials are provided. Methods involve oxidizing silicon-containing materials and thermally removing the oxidized silicon-containing materials at particular temperatures for a self-limiting etch process. Methods also involve a surface reaction limited process using a halogen source and modulated temperature and exposure duration to etch small amounts of silicon-containing materials. Apparatuses are capable of flowing multiple oxidizers at particular temperature ranges to precisely etch substrates.

Abstract: Various embodiments described herein relate to methods and apparatus for etching a semiconductor substrate to remove a target material from a surface of the substrate. Generally, the techniques described herein are thermal techniques that do not rely on the use of plasma. In a number of embodiments, a particular gas mixture is provided to the reaction chamber to react with the target material. The gas mixture may include a combination of a halogen source such as hydrogen fluoride (HF), an organic solvent and/or water, an additive, and a carrier gas. A number of different materials may be used for the organic solvent and/or for the additive.

Abstract: A method for cleaning a substrate includes arranging the substrate in a processing chamber; controlling a pressure of the processing chamber to a predetermined pressure range; controlling a temperature of the processing chamber to a predetermined temperature range; and supplying a vapor mixture including a metal chelating vapor for a first period to remove metal contamination from surfaces of the substrate.

Abstract: A gas mixture for treating a substrate in a substrate processing system includes hydrogen fluoride gas, a vapor of an alcohol, an additive consisting of a base, and a carrier gas. The gas mixture can be used to treat high aspect ratio (HAR) structures arranged on a surface of a substrate. A surface of the substrate may be spin rinsed using a first rinsing liquid. The first rinsing liquid is spun off from the surface of the substrate. The gas mixture is directed onto the surface of the substrate after the first rinsing liquid is dispensed.