Patents by Inventor Gerrit Bollen

Gerrit Bollen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Circuit arrangement for controlling a high side CMOS transistor in a high voltage deep sub micron process
    Patent number: 8004318
    Abstract: The present invention relates to a circuit arrangement, which is used for controlling a high side CMOS transistor (M1) in a high voltage deep sub micron process. To provide a circuit arrangement for switching a high side CMOS transistor (M1) in a circuit having a very thin gate oxide, produced by a deep sub micron process, a circuit arrangement is proposed for controlling a high side CMOS transistor (M1), wherein the high side CMOS transistor (M1) is coupled between a high side voltage potential (Vbat) and a control output (OUT) for switching an external device, the high side CMOS transistor (M1) is controlled at its gate by a reference potential (Vbat-Vref), which is provided by a high side voltage reference (11) having a capacitor (C1), which is charged for switching on and discharged for switching off the high side CMOS transistor (M1).
    Type: Grant
    Filed: November 15, 2007
    Date of Patent: August 23, 2011
    Assignee: NXP B.V.
    Inventors: Henk Boezen, Clemens De Haas, Gerrit Bollen, Inesz Weijland
  • CIRCUIT ARRANGEMENT FOR CONTROLLING A HIGH SIDE CMOS TRANSISTOR IN A HIGH VOLTAGE DEEP SUB MICRON PROCESS
    Publication number: 20100052774
    Abstract: The present invention relates to a circuit arrangement, which is used for controlling a high side CMOS transistor (M1) in a high voltage deep sub micron process. To provide a circuit arrangement for switching a high side CMOS transistor (M1) in a circuit having a very thin gate oxide, which is in particular produced by a deep sub micron process a circuit arrangement is proposed for controlling a high side CMOS transistor (M1) in a high voltage deep sub micron process, wherein the high side CMOS transistor (M1) is coupled between a high side voltage potential (Vbat) and a control output (OUT) for switching an external device, the high side CMOS transistor (M1) is controlled at its gate by a reference potential (Vbat-Vref), which is provided by a high side voltage reference (11) having a capacitor (C1), which is charged for switching on and discharged for switching off the high side CMOS transistor (M1).
    Type: Application
    Filed: November 15, 2007
    Publication date: March 4, 2010
    Applicant: NXP, B.V.
    Inventors: Henk Boezen, Clemens De Haas, Gerrit Bollen, Inesz Weijland
  • Voltage regulator circuit arrangement
    Publication number: 20070159154
    Abstract: The invention relates to a voltage regulator circuit arrangement comprising a voltage regulator for generating an out-put voltage in dependence of a reference signal, characterized in that a reference signal generation circuit is provided for generating said reference signal comprising a plurality of inputs connected to internal terminals, whereby a sub-set of said plurality internal terminals is connected to an external terminal.
    Type: Application
    Filed: January 10, 2005
    Publication date: July 12, 2007
    Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.
    Inventors: Aloysius Boomkamp, Harm Voss, Stefan Butselaar, Clemens Gerhardus Haas, Gerrit Bollen, Ruurd Visser