Patents by Inventor Gerrit C. Van Hoften

Gerrit C. Van Hoften has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Ion implantation device arranged to select neutral ions from the ion beam
    Patent number: 6326631
    Abstract: An ion implantation device includes at least two successive deceleration stages the first deceleration stage, looking in the downstream direction, being arranged to decelerate the ion beam, to deflect the ion beam, and to form an intermediate crossover, whereas the second deceleration stage is arranged to decelerate the ion beam further and to subject the beam to a converging effect.
    Type: Grant
    Filed: September 21, 1999
    Date of Patent: December 4, 2001
    Assignee: U.S. Philips Corporation
    Inventors: Jarig Politiek, Gerrit C. Van Hoften
  • Method of manufacturing a semiconductor device having a semiconductor body with a buried silicide layer
    Patent number: 5236872
    Abstract: A method of manufacturing a semiconductor device in which a thin buried silicide layer is formed by implantation includes the step of first forming an amorphous layer by implantation, which layer is then converted into the buried silicide layer by a heat treatment. A sufficiently thin buried silicide layer, of about 10 nm thickness, can be obtained in this manner, and the resulting structure is suitable, for example, for the manufacture of a metal-base transistor.
    Type: Grant
    Filed: March 9, 1992
    Date of Patent: August 17, 1993
    Assignee: U.S. Philips Corp.
    Inventors: Alfred H. van Ommen, Jozef J. M. Ottenheim, Erik H. A. Dekempeneer, Gerrit C. van Hoften