Abstract: A light time-of-flight pixel comprising at least one modulation gate (GA, GB) having a mixing and a transfer region (TA, TB), and comprising at least one storage region (SGA, SGB), the transfer region (TA, TB) being arranged between the mixing region and the storage region (SGA, SGB), the transfer region being doped in such a way that a modulation gate voltage present at the modulation gate (GA, GB) opens or closes charge transfer to the storage region (SGA, SGB).

Abstract: The invention relates to a light transit time pixel comprising —at least one modulation gate (GA, GB) which has a photoactive region (FAB) and a storage region (MA, MB), said storage region (MA, MB) having a locally increased n-type doping below the modulation gate (GA, GB) and delimiting the photoactive region (FAB) of the modulation gate (GA, GB), —at least one transfer gate (TXA, TXB) which adjoins the storage region (MA, MB) of the modulation gate (GA, GB), —at least one reading diode (DA, DB) which follows the transfer gate (TXA, TXB), —at least one drain gate (DG) which adjoins one side of the light-sensitive region (FAB) of the modulation gate (GA, GB), and —at least one drain diode (DD) which follows the drain gate (DG).