Abstract: An apparatus is provided that includes a substrate. In addition, the apparatus includes a first electrically conductive path arranged in a second layer above the substrate and forming a first connection of the apparatus, and a second electrically conductive pad arranged in the second layer and forming a second connection of the apparatus. An electrically conductive element is arranged in a first layer spaced apart from the second layer. The electrically conductive element forms a first capacitor with either the first pad or the second pad. In addition, a first coil is arranged in the first layer, the second layer, or in both layers. A first end of the first coil is connected to the second pad.

Abstract: One aspect of the invention relates to a semiconductor chip with a semiconductor body. The semiconductor body has an inner region and a ring-shaped outer region. An electronic structure is monolithically integrated in the inner region and has a controllable first semiconductor component with a first load path and a first control input for controlling the first load path. Further, a ring-shaped second electronic component is monolithically integrated in the outer region and surrounds the inner region. Moreover, the second electronic component has a second load path that is electrically not connected in parallel to the first load path.

Abstract: One aspect of the invention relates to a semiconductor chip with a semiconductor body. The semiconductor body has an inner region and a ring-shaped outer region. An electronic structure is monolithically integrated in the inner region and has a controllable first semiconductor component with a first load path and a first control input for controlling the first load path. Further, a ring-shaped second electronic component is monolithically integrated in the outer region and surrounds the inner region. Moreover, the second electronic component has a second load path that is electrically not connected in parallel to the first load path.

Abstract: A protection arrangement for a power semiconductor component made of a plurality of cells, in which a current sensor made of a current sense transistor and current sense resistors and also a temperature sensor, is disclosed. The current sense transistor and the temperature sensor are provided in a gap or in different gaps between the cells, while the current sense resistor is fitted directly on at least one cell. The temperature sensor may, include a plurality of stages which are located from the center of the power semiconductor component to an edge of the latter in the gap between two cells.

Abstract: A protection arrangement for a power semiconductor component made of a plurality of cells, in which a current sensor made of a current sense transistor and current sense resistors and also a temperature sensor, is disclosed. The current sense transistor and the temperature sensor are provided in a gap or in different gaps between the cells, while the current sense resistor is fitted directly on at least one cell. The temperature sensor may, include a plurality of stages which are located from the center of the power semiconductor component to an edge of the latter in the gap between two cells.